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Metal element doped lead sulfide material, preparation method thereof and application of metal element doped lead sulfide material in metal element doped lead sulfide film

A metal element, lead sulfide technology, applied in lead sulfide, electrical components, semiconductor devices, etc., can solve problems such as doping in aqueous solution, achieve controllable doping concentration, good uniformity and photosensitive characteristics, and simple preparation methods

Pending Publication Date: 2022-04-08
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] This application discloses a method of post-processing to prepare VA group metal elements doped lead sulfide material. The process is simple and the technology is stable. It overcomes the problem of doping in aqueous solution that cannot be solved by the prior art, and realizes high-quality and low-cost doping. The preparation of lead sulfide thin films laid the foundation for the preparation of lead sulfide infrared photodiodes

Method used

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  • Metal element doped lead sulfide material, preparation method thereof and application of metal element doped lead sulfide material in metal element doped lead sulfide film
  • Metal element doped lead sulfide material, preparation method thereof and application of metal element doped lead sulfide material in metal element doped lead sulfide film
  • Metal element doped lead sulfide material, preparation method thereof and application of metal element doped lead sulfide material in metal element doped lead sulfide film

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Embodiment 1

[0083] Step 1: Use sodium hydroxide deionized water to prepare a sodium hydroxide solution with a concentration of 0.01g / mL, and record it as solution G;

[0084] Step 2: Using lead nitrate (Pb(NO 3 ) 2 ) and deionized water preparation 18mmol / L lead nitrate solution, recorded as solution H;

[0085] Step 3: adopt thiourea and deionized water to prepare 1.5mol / L thiourea solution, denoted as solution I;

[0086] Step 4: Take a certain amount of solution G and add it to solution H to stabilize the pH value at 12.5, stir and then let it stand, and filter to obtain a clear solution J for later use.

[0087] Step 5: Ultrasonic clean the substrate with detergent, acetone, isopropanol, ethanol and deionized water for 15 minutes respectively, and after drying, place the substrate in a UV ozone or plasma cleaner for 5 minutes; Place the glass vertically or obliquely downwards in solution J, and store it at 25°C.

[0088] Step 6: Take solution I and slowly add it to the above solut...

Embodiment 2

[0094] Step 1: Use sodium hydroxide deionized water to prepare a sodium hydroxide solution with a concentration of 0.01g / mL, and record it as solution G;

[0095] Step 2: Using lead nitrate (Pb(NO 3 ) 2 ) and deionized water preparation 18mmol / L lead nitrate solution, recorded as solution H;

[0096]Step 3: adopt thiourea and deionized water to prepare 1.5mol / L thiourea solution, denoted as solution I;

[0097] Step 4: Take a certain amount of solution G and add it to solution H to stabilize the pH value at 12.5, stir and then let it stand, and filter to obtain a clear solution J for later use.

[0098] Step 5: Ultrasonic clean the substrate with detergent, acetone, isopropanol, ethanol and deionized water for 15 minutes respectively, and after drying, place the substrate in a UV ozone or plasma cleaner for 5 minutes; Place the glass vertically or obliquely downwards in solution J, and store it at 25°C.

[0099] Step 6: Take solution I and slowly add it to the above soluti...

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Abstract

The invention discloses a metal element doped lead sulfide material, a preparation method thereof and application of the metal element doped lead sulfide material in a metal element doped lead sulfide film. The chemical general formula of the metal element doped lead sulfide material is MxPb1-xS, wherein M is selected from at least one of VA group metal elements; 0.0001 < = x < = 0.01. The method comprises the steps that the film of the lead sulfide material is prepared through the chemical bath deposition method, the VA group metal elements are doped into the prepared film of the lead sulfide material through the aftertreatment method, the doping concentration is controllable, the preparation process is controllable, and the preparation method is simple. The prepared thin film has excellent uniformity and photosensitive characteristics, and can be used for preparing a near-infrared photoelectric detector.

Description

technical field [0001] The application relates to a metal element-doped lead sulfide material, a preparation method thereof, and an application in a metal element-doped lead sulfide thin film, belonging to the technical field of electronic materials. Background technique [0002] Lead sulfide material is a narrow-band material suitable for infrared detection. Its forbidden band width is 0.41eV, and its absorption covers the entire near-infrared band. It is one of the first materials used in infrared detection. Since the last century, it has received extensive attention and research, and has been widely used in security monitoring, infrared remote sensing, infrared guidance, and infrared tracking. It has excellent photoelectric properties and broad application prospects. [0003] Traditional lead sulfide detectors are mainly photoconductive structures. Chemical water bath deposition technology and chemical solution spin coating technology are commonly used preparation method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G21/21C03C17/22C04B41/85H01L31/032H01L31/102H01L31/18
Inventor 唐江葛赐雨高亮刘婧李森
Owner HUAZHONG UNIV OF SCI & TECH
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