Lamb wave resonator and manufacturing method thereof
A technology of Lamb wave resonator and manufacturing method, applied in the direction of impedance network, electrical components, etc., can solve the problems of pyroelectric effect electrode damage, low Q value, affecting device performance and stability, etc., to reduce damage and suppress Leakage, the effect of improving the heat dissipation performance
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Embodiment 1
[0043] Below, refer to Figure 1 to Figure 7 A Lamb wave resonator according to one embodiment of the present invention will be described. In this embodiment, as an example, a Lamb resonator includes a substrate 1 and a resonator structure, and the resonator structure includes a metal layer 2 , a piezoelectric layer 3 , electrodes 4 and bus bars 5 .
[0044] figure 1 It is a three-dimensional schematic diagram of a structure obtained by disposing a metal layer 2 between a piezoelectric layer 3 and a substrate 1 in a Lamb resonator according to an embodiment of the present invention.
[0045] Such as figure 1 As shown, the substrate 1 , the metal layer 2 , the piezoelectric layer 3 , the electrodes 4 and the bus bars 5 of the Lamb resonator are shown sequentially from bottom to top.
[0046] The substrate 1 can be formed of materials such as sapphire, GaAs, glass, Si, 4H-SiC and the like. Preferably, the substrate 1 is formed of a material with high acoustic impedance, su...
Embodiment 2
[0055] Below, refer to Figure 8 A manufacturing method for manufacturing a Lamb wave resonator according to an embodiment of the present invention will be described.
[0056] Figure 8 is a flowchart of a method of manufacturing a Lamb resonator according to an embodiment of the present invention.
[0057] Such as Figure 8 As shown, the method starts at step S801. In step S801 , a substrate is formed using materials such as sapphire, GaAs, glass, Si, 4H-SiC and the like. Preferably, the substrate is formed using a material with high acoustic impedance, such as 4H-SiC, to prevent energy such as acoustic wave energy from leaking to the substrate.
[0058] In step S802, a metal layer is formed on the substrate using techniques such as physical / chemical vapor deposition techniques and atomic layer deposition techniques. The metal layer may be formed of one or more of Al, Cu, W. The metal layer may have a low acoustic impedance relative to the substrate.
[0059] In step S...
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