Power device manufacturing method and device
A technology of power devices and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of high manufacturing cost and complicated process, and achieve the effect of reducing process complexity and manufacturing cost
Active Publication Date: 2021-01-29
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0005] The present application provides a method for manufacturing a power device and the device, which can solve the technical problems caused by the need to use different procedures for different doping of the cell region and the guard ring region in the method of manufacturing power devices provided in the related art. Complex, high manufacturing cost issues
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[0032] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0033] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...
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The invention discloses a power device manufacturing method and device, and the method comprises the steps: forming a hard mask layer on an epitaxial layer, and enabling the epitaxial layer to be formed on a substrate; etching a target region of the epitaxial layer, forming a device trench in the epitaxial layer of the cellular region, forming a first protection ring trench and a second protectionring trench in the epitaxial layer of the protection ring region, the width of the first protection ring trench being greater than the depth of the first protection ring trench, and the width of thefirst protection ring trench being greater than the width of the device trench, the width of the first protection ring groove being greater than that of the second protection ring groove; and performing ion implantation, wherein the ion implantation angle is 20-50 degrees, and doped well regions are formed at the bottom and on the side surface of the first protection ring trench. According to theinvention, the width of the first protection ring trench is set to be greater than the depth of the first protection ring trench, and the ion implantation angle is set to be 20-50 degrees, so that thedoping influence on the bottom and the side surface of the device trench is relatively small while the protection ring is formed at the bottom and the side surface of the first protection ring trench; and therefore, the protection ring different from the doping distribution of the cellular region is formed in the same process step.
Description
technical field [0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a method for manufacturing a power device and the device. Background technique [0002] In the structure of a semiconductor device, especially a power device, in order to suppress minority carrier movement or latch-up, a guard ring is usually provided on the outer ring of the cell region of the device. [0003] refer to figure 1 , which shows a schematic cross-sectional view of a device provided in the related art. Such as figure 1 As shown, the substrate 110 includes a cell region 1101 and a guard ring region 1102, an epitaxial layer 120 is formed on the substrate 110, a device trench 101 is formed in the epitaxial layer 120 of the cell region 1101, and the epitaxial layer of the guard ring region 1102 Guard ring trench 102 is formed in 120 . [0004] In the related art, after the device trench 101 and the guard ring trench 102 are formed, t...
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IPC IPC(8): H01L21/308H01L21/265H01L21/266H01L29/06
CPCH01L21/308H01L21/26513H01L21/26586H01L21/266H01L29/0619
Inventor 刘华明
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP