MOSFET-TFET hybrid 8T SRAM unit circuit

A unit circuit, hybrid technology, applied in information storage, static memory, digital memory information and other directions, can solve the problems affecting the stability of storage nodes and increase the static power consumption of circuits, so as to avoid weak transmission capacity and reduce static power. Consumption and elimination of the effect of forward biased P-I-N current

Active Publication Date: 2021-02-02
ANHUI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the structural characteristics of TFETs, there are still some challenges in circuit design using TFETs. TFETs have unidirectional conductivity, which will do different doping between the P and N regions of the MOS transistor. Due to the source and drain doping The asymmetry of the TFET has a forward biased P-I-N current that is not controlled by the gate, which increases the static power consumption of the circuit and also affects the stability of the storage node in the hold state, but there is no corresponding solution in the prior art

Method used

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  • MOSFET-TFET hybrid 8T SRAM unit circuit
  • MOSFET-TFET hybrid 8T SRAM unit circuit
  • MOSFET-TFET hybrid 8T SRAM unit circuit

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Embodiment Construction

[0020] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0021] The basic device used in the traditional static random access memory (Static Random-Access Memory, SRAM) unit circuit is a MOSFET, and the basic device used in the MOSFET-TFET hybrid 8T SRAM unit circuit proposed in this embodiment is a tunneling field effect transistor ( TFET) and metal-oxide-semiconductor field-effect transistors (MOSFETs), avoiding the problem of poor conduction capability of stacked TFETs. Embodiments of the present inve...

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Abstract

The invention discloses a MOSFET-TFET (Metal Oxide Semiconductor Field Effect Transistor) hybrid 8T SRAM (Static Random Access Memory) unit circuit. A power supply VDD is connected with a source electrode of a PTFET P1, and the power supply VDD is also connected with a source electrode of a PTFET P2; a drain electrode of the PTFET P1 is connected with a drain electrode of the NMOSFET N5, a grid electrode of the PTFET P2, the grid electrode of the NTFET N2 and a drain electrode of the NTFET N1; a drain electrode of the PTFET P2 is connected with a grid electrode of the PTFET P1, a grid electrode of the NTFET N1, a drain electrode of the NTFET N2, a source electrode of an NMOSFET N6 and a source electrode of an NTFET N4. According to the circuit, a mode of mixing a TFET device and an MOSFETdevice is adopted, and positive bias P-I-N current occurring when the TFET is used as an SRAM transmission tube is eliminated.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a MOSFET-TFET hybrid 8T SRAM unit circuit. Background technique [0002] With the continuous development of the integrated circuit industry and the continuous improvement of chip integration, the power consumption problem of traditional MOSFETs (metal-oxide semiconductor field effect transistors) has become more prominent. The direct way to reduce power consumption is to reduce the power supply voltage of the circuit. However, developing integrated circuits on a nanoscale platform and lowering the power supply voltage of MOSFETs is facing great challenges. The subthreshold swing (Subthreshold Swing, SS) limited by the Boltzmann distribution seriously affects the switching rate of the device. As the power supply voltage decreases, the leakage current of the MOSFET increases exponentially, resulting in an exponential increase in static power consumption. Therefore...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/412G11C11/419
CPCG11C11/412G11C11/419
Inventor 卢文娟李露彭春雨高珊赵强吴秀龙蔺智挺陈军宁
Owner ANHUI UNIVERSITY
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