MOSFET-TFET hybrid 11T SRAM unit circuit

Abstract

The invention discloses a MOSFE-TFET hybrid 11T SRAM unit circuit, which comprises five NTFET transistors, four PTFET transistors and two NMOSFETs, and is characterized in that a power supply VDD is electrically connected with a source electrode of a PTFET transistor P3; the drain electrode of the PTFET transistor P3 is electrically connected with the source electrode of the PFET transistor P1; the drain electrode of the PTFET P2 is electrically connected with the drain electrode of the NTFET N2, the drain electrode of the NMOSFET N4, the grid electrode of the PTFET P1, the grid electrode of the NTFET N1 and the grid electrode of the NTFET N6; and the source electrode of the NTFET transistor N5 and the source electrode of the NTFET transistor N6 are both electrically connected with the GND. According to the circuit, the writing capability of the SRAM unit is enhanced, the static power consumption of the circuit is reduced, and the stability of the SRAM unit in a maintaining state is improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a MOSFET-TFET hybrid 11T SRAM unit circuit. Background technique [0002] With the development of mobile electronic products, people's demand for low power consumption of integrated circuits has become more and more urgent. In recent years, MOSFET (Metal-Oxide Semiconductor Field Effect Crystal) has become an important part of digital integrated circuits and analog integrated circuits. However, with the development of integrated circuit technology nodes, some shortcomings of MOSFETs in ultra-low power consumption circuits make it difficult to obtain satisfactory results. Because with the reduction of MOSFET size, due to the short channel effect of MOSFET, its ability to turn off at sub-threshold voltage is weakened, so that the static leakage current and static power consumption of the circuit increase. In microprocessors, static random access The memory (SRAM...

AI Technical Summary

Problems solved by technology

However, due to the structural characteristics of TFETs, there are still some challenges in the circuit design using TFETs. TFETs have unidirectional conductivity, which makes different doping of the P and N regions of the MOS transistor. Due to the source and drain doping Complex asymmetry, TFET has a forward-biased P-I-N current that is not controlled by the gate, which increases the static power consumption of the circuit and also affects the stability of the storage node in the hold state

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