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Laser lift-off masks

A positive photoresist and negative photoresist technology, applied in the manufacture of semiconductor devices, electrical components, semiconductor/solid-state devices, etc., can solve problems such as cracking

Pending Publication Date: 2021-02-09
CTRL LABS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the LEDs are thin, they tend to crack when subjected to the LLO technique

Method used

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  • Laser lift-off masks
  • Laser lift-off masks
  • Laser lift-off masks

Examples

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Embodiment Construction

[0019] In the following description, for purposes of explanation, specific details are set forth in order to provide a thorough understanding of certain inventive embodiments. It will be apparent, however, that various embodiments may be practiced without these specific details. The drawings and descriptions are not intended to be limiting.

[0020] Techniques related to performing LLO during the fabrication of semiconductor devices, such as LEDs and photodiodes, are disclosed herein. In some embodiments, the fabricated semiconductor devices are tiny inorganic LEDs known as micro-LEDs. As used herein, a micro-LED may refer to an LED having an active light-emitting region with a linear dimension of less than 50 μm, less than 20 μm, or less than 10 μm. For example, linear dimensions can be as small as 2 μm or 4 μm. Their small size enables a display system to have a single pixel comprising three of them: a red micro-LED, a green micro-LED and a blue micro-LED. Their small si...

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PUM

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Abstract

Techniques related to laser lift-off masks are disclosed. In some embodiments, masking material is applied to a substrate that is attached to a plurality of semi conductor device sets. More specifically, the masking material is applied to one or more regions of the substrate between the semiconductor device sets. When the semiconductor device sets are embedded in a filling material, the masking material may be situated between the substrate and the filling material. Thus, transmitting light through the substrate toward the semiconductor device sets causes the substrate to become detached fromthe semiconductor device sets. However, the light is at least partially occluded by the masking material.

Description

Background technique [0001] The present disclosure relates generally to semiconductor device fabrication, and more particularly to laser lift-off masks. [0002] Semiconductor devices have become common in electronics to provide benefits such as size reduction, improved durability, and increased efficiency. For example, compared to an incandescent light bulb, a light emitting diode (LED) is typically smaller, lasts several times longer, and converts proportionally more energy into light than heat. Thus, semiconductor devices have even found their way into display systems, such as those found in televisions, computer monitors, laptops, tablets, smartphones, and wearable electronics. In particular, tiny LEDs can be used to form sub-pixels of display systems. However, making such tiny LEDs can be challenging. [0003] For example, some display systems contain tiny LEDs as flip chips. Flip chip fabrication of LEDs often involves laser lift-off (LLO) techniques for separating t...

Claims

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Application Information

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IPC IPC(8): H01L33/00
CPCH01L33/0093H01L21/561H01L33/56H01L2933/005
Inventor D·布罗多塞努D·玛索布雷J·斯玛尔A·O·托伦特斯P·J·休格斯
Owner CTRL LABS CORP
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