Temporary bonding and debonding method of semiconductor device and semiconductor device
A temporary bonding, semiconductor technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as low debonding efficiency, easy damage to wafers, and low yield
Active Publication Date: 2021-07-16
UNITED MICROELECTRONICS CENT CO LTD
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Problems solved by technology
However, the shear force during mechanical debonding tends to damage the wafer, resulting in lower yield
In the process of solvent dissolution and debonding, since the dissolving agent slowly dissolves the temporary bonding glue from the edge of the wafer, it takes a long time for the dissolving agent to reach the center of the wafer, and the debonding efficiency is low.
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[0012] It will be understood that although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections Should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.
[0013] Spatially relative terms such as "below," "beneath," "lower," "below," "above," "upper," etc. may be used herein for convenience. The description is used to describe the relationship of one element or feature to another element or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended to enc...
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Abstract
A method for temporary bonding and debonding of a semiconductor device and the semiconductor device are disclosed. The temporary bonding and debonding method of the semiconductor device includes: forming a first metal layer on a first wafer, a device structure is formed in the first wafer, and the first metal layer is formed on a part of the first wafer close to the device structure side; forming a second metal layer corresponding to the first metal layer on the second wafer; bonding the second metal layer to the first metal layer so that the second wafer is bonded to the first wafer; A backside process is performed on the side of a wafer away from the device structure; debonding is performed by electrochemical anodic metal dissolution, so that the first wafer is separated from the second wafer.
Description
technical field [0001] The present disclosure relates to semiconductor technology, in particular to a method for temporary bonding and debonding of a semiconductor device and the semiconductor device. Background technique [0002] In the semiconductor integration process, after the device layer is processed on the front side of the wafer, it is sometimes necessary to perform related processes on the back side. In order to avoid the occurrence of wafers such as fragmentation or bending deformation during the back process, the wafer can be temporarily bonded to another wafer or carrier with a similar diameter before the back process of the wafer, so as to realize the alignment of the wafer. support. After the wafer is backside processed, the wafer is debonded from another wafer or carrier to separate the two. [0003] Temporary bonding of a wafer to another wafer or carrier can be achieved using temporary bonding materials, for example, organic materials such as temporary bo...
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IPC IPC(8): H01L21/683
CPCH01L24/83H01L24/98H01L2224/83359H01L2224/98
Inventor 王淼曾怀望焦文龙杨睿峰李嗣晗
Owner UNITED MICROELECTRONICS CENT CO LTD