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Threshold voltage adjusting method of three-terminal superlattice storing and calculating integrated device

一种阈值电压、调节方法的技术，应用在电气元件、节能计算、气候可持续性等方向，能够解决数据线传输信号速率有限、限制计算机数据处理速度、中央处理器与存储器高能量损耗等问题，达到提升数据处理速度、降低功耗、过程简便易行的效果

Active Publication Date: 2021-02-23
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

This von Neumann structure will not only cause extremely high energy loss caused by frequent data exchange between the central processing unit and the memory, but also greatly limit the speed of computer data processing due to the limited rate of data line transmission signals.

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  • Threshold voltage adjusting method of three-terminal superlattice storing and calculating integrated device
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  • Threshold voltage adjusting method of three-terminal superlattice storing and calculating integrated device

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preparation example Construction

[0039] This embodiment also provides a method for preparing the above-mentioned three-terminal superlattice memory-computing integrated device with adjustable threshold voltage, including the following steps:

[0040] S1: Provide a substrate layer, on which the lower electrode layer and the first inverse piezoelectric layer are sequentially deposited; the substrate layer includes a silicon wafer and a thermal growth layer deposited on the silicon wafer, and the lower electrode layer is sequentially deposited on the thermal growth layer , the first inverse piezoelectric layer;

[0041] S2: Open a first through hole, the first through hole penetrates through the first reverse piezoelectric layer and contacts the surface of the lower electrode layer, and fills the heating layer inside the first through hole; the shape of the first through hole is not limited, and its cross section can be It is a circle, a square or other regular polygons, and this embodiment is preferably a circl...

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Abstract

The invention provides a threshold voltage adjusting method of a three-terminal superlattice storing and calculating integrated device. Inverse piezoelectric layers are arranged between a lower electrode layer and a superlattice film and between the superlattice film and an upper electrode layer respectively; and different tensile stresses are generated on a contacted superlattice thin film by utilizing different tensile deformations generated when different voltages are applied to the two inverse piezoelectric layers so that the energy barrier of atomic layer turnover of a phase change material in the superlattice thin film is adjusted. The invention further provides a method for achieving ''AND'' logic operation through the threshold voltage adjusting method, when voltage pulses are applied to the upper electrode layer, the first inverse piezoelectric layer and the second inverse piezoelectric layer of the superlattice storing and calculating integrated device at the same time, the superlattice film generates the sudden change of the resistance value, which means that output is ''1''.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and more specifically relates to a threshold voltage adjustment method of a three-terminal superlattice storage and calculation integrated device and a method for realizing the "AND" logic operation of the three-terminal superlattice storage and calculation integrated device. Background technique [0002] At present, the development of various artificial intelligence technologies is in the ascendant, especially the research on brain-like devices. The characteristic of brain-like devices is that storage and calculation are implemented in the same device, that is, storage and calculation are integrated. At present, most computers use the von Neumann architecture, that is, the central processing unit and storage are separated, and the two are connected through data lines. This von Neumann structure will not only lead to extremely high energy loss caused by frequent data exchange bet...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/253H10N70/801H10N70/8613H10N70/011Y02D10/00
Inventor 程晓敏冯金龙缪向水
Owner HUAZHONG UNIV OF SCI & TECH
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