Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device structure

A device structure and semiconductor technology, which is applied in the direction of semiconductor devices, semiconductor/solid-state device components, and semiconductor/solid-state device testing/measurement, etc.

Inactive Publication Date: 2021-02-26
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the size of the structure continues to shrink, and it is becoming more and more difficult to carry out the manufacturing process and the corresponding testing process
Therefore, the method of monitoring, modifying, and improving semiconductor devices with smaller and smaller dimensions is also facing challenges

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device structure
  • Semiconductor device structure
  • Semiconductor device structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0046] Different embodiments or examples provided in the following content can implement different structures of the embodiments of the present invention. The examples of specific components and arrangements are used to simplify the disclosure and not to limit the invention. For example, the statement that the first component is formed on the second component includes that the two are in direct contact, or there are other additional components interposed between the two instead of direct contact. In addition, various examples of the present invention may repeatedly use the same reference numerals for brevity, but elements with the same reference numerals in various embodiments and / or configurations do not necessarily have the same corresponding relationship.

[0047] In addition, spatial relative terms such as "below", "below", "lower side", "above", "upper side", or similar terms may be used to simplify the relationship between one element and another element in the drawings....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a testing region and multiple first conductive lines over the testing region.The first conductive lines are electrically connected in series. The semiconductor device structure also includes multiple second conductive lines over the testing region. The second conductive linesare electrically connected in series, and the second conductive lines are physically separated from the first conductive lines. The semiconductor device structure further includes multiple magnetic structures wrapping around portions of the first conductive lines and wrapping around portions of the second conductive lines. The magnetic structures are arranged in a column.

Description

technical field [0001] Embodiments of the present invention relate to the structure of a semiconductor device, and more particularly to the layout of its conductive lines. Background technique [0002] The semiconductor integrated circuit industry has experienced rapid growth. Technological advances in integrated circuit materials and design have shaped several generations of integrated circuits. Each generation of integrated circuits has smaller and more complex circuits than the previous generation of integrated circuits. In the evolution of integrated circuits, functional density (such as the number of interconnection devices per unit chip area) usually increases as geometric dimensions (such as the smallest component or circuit that can be produced by a manufacturing process) shrink. A shrinking process is often beneficial for increasing throughput and reducing associated costs. [0003] One of the elements of the continued evolution toward smaller device sizes and hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66
CPCH01L22/30H01L28/10H01L22/34H01L23/5225H01L23/5227H01L23/552H01L27/01
Inventor 王敏哲邱当荣赖启彰蔡佳衡李明机廖伟益
Owner TAIWAN SEMICON MFG CO LTD