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Manufacturing method of semiconductor device and semiconductor device

A semiconductor and device technology, which is applied in the field of semiconductor device preparation, can solve problems such as the difficulty of the preparation process, and achieve the effects of reducing the difficulty of the preparation process, simplifying the process flow, and reducing costs

Active Publication Date: 2022-04-08
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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  • Claims
  • Application Information

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Problems solved by technology

[0003] In view of the above problems, the present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device, which solves the technical problem in the prior art that the preparation process of the boundary between the internal fine pattern area and the peripheral circuit area is relatively difficult

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  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device
  • Manufacturing method of semiconductor device and semiconductor device

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Embodiment Construction

[0046] The implementation of the present disclosure will be described in detail below in conjunction with the accompanying drawings and embodiments, so as to fully understand and implement the realization process of how to apply technical means to solve technical problems and achieve corresponding technical effects in the present disclosure. The embodiments of the present disclosure and the various features in the embodiments can be combined with each other under the premise of no conflict, and the formed technical solutions are all within the protection scope of the present disclosure. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

[0047] It should be understood that although the terms "first", "second", "third" etc. may be used to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections do ...

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Abstract

The present disclosure provides a method for fabricating a semiconductor device and the semiconductor device. In the fabrication method, the sacrificial layer is patterned, and at the same time, two first boundary pattern units arranged at intervals along the first direction are formed, and the Separate pattern units arranged at intervals between a boundary pattern unit and along the second direction. The boundary pattern is formed simultaneously in the process of forming the internal fine pattern, so that the usable area of ​​the preparation process of the boundary between the internal fine pattern area and the peripheral circuit area increases, the difficulty of the preparation process is reduced, and the process flow is simplified and the cost is reduced .

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a method for preparing a semiconductor device and the semiconductor device. Background technique [0002] Today, semiconductor devices are typically highly integrated and dense. Accordingly, design rules of semiconductor devices have been continuously reduced, and methods of forming fine patterns in semiconductor devices have been used. Sometimes because they are so small, fine patterns need to be formed using techniques that exceed the resolution limit of lithographic equipment. As for the peripheral circuit area or the core area, usually the boundary between the internal fine pattern area and the peripheral circuit area is formed by etching after the internal fine pattern and peripheral circuit are formed, but at this time, since the fine pattern and peripheral circuit have been formed , the process availability area left for the boundary is very small,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8229H01L21/8239H01L27/102H01L27/105
CPCH01L27/105H01L27/1022
Inventor 王嘉鸿童宇诚陶丹丹
Owner FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
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