Double-color infrared focal plane detector and mesa etching process method thereof
A technology of infrared focal plane and process method, which is applied in the field of two-color infrared focal plane detector and its mesa etching process, can solve the problems of low production efficiency and cumbersome process flow, and achieve the goal of improving production efficiency and simplifying the etching process flow Effect
Active Publication Date: 2021-03-09
安徽光智科技有限公司
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[0003] In the mesa etching process of the stacked material structure of the two-color infrared focal plane detector, the lower electrode needs to be etched deeply, and the common electrode needs to be etched shallowly. The traditional process flow is the part that needs deep etching and the part that needs shallow etching. The photolithography mask process is carried out separately and then etched separately, the process flow is cumbersome and the production efficiency is low
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[0034] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.
[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the technical field of the application; the terms used herein in the description of the application are only to describe specific embodiments The purpose is not to limit the present application; the terms "comprising...
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Abstract
The invention provides a double-color infrared focal plane detector and a mesa etching process method thereof. The mesa etching process method comprises the steps of S1, spin-coating photoresist on anepitaxial structure; S2, exposing the epitaxial structure by using a halftone mask, and forming a first region and a second region after the epitaxial structure is exposed; S3, performing dry etchingfor the first time through etching gas; S4, removing all parts, which are located below the second region, of the photoresist through O2 plasmas; S5, performing dry etching for the second time through etching gas; and S6, removing the photoresist through a photoresist removing and stripping process. According to the invention, complete exposure of the part needing deep etching and half exposure of the part needing shallow etching on the epitaxial structure are realized through the halftone mask plate. In the whole etching process, different depths of etching of different parts can be realizedonly through first-time photoetching process and second-time dry etching process, so that the etching process flow is simplified, and the production efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of focal plane detectors, in particular to a two-color infrared focal plane detector and a mesa etching process method thereof. Background technique [0002] Two-color infrared focal plane detectors are mainly used in high-contrast imaging and target recognition. The two-color infrared detector system is compact in structure and light in weight, and can simultaneously detect two bands, which is one of the main development directions of the infrared detection system. Among them, the InAs / GaSb type II superlattice material is an ideal material for two-color infrared detection due to its special energy band structure, good material stability and multiple broad-spectrum response bands. The epitaxial structure of the second type of superlattice two-color infrared focal plane detector is usually NP-PN or PN-NP back-to-back stacked structure, and the middle is connected by a P-type or N-type common electrode. Man...
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IPC IPC(8): H01L31/0352H01L31/102H01L31/18H01L21/027
CPCH01L31/035263H01L31/102H01L31/184H01L21/0271Y02P70/50
Inventor 刘志方杨晓杰
Owner 安徽光智科技有限公司