Semiconductor package including conductive bumps

Abstract

A semiconductor package is provided and includes a first semiconductor chip including a first through electrode. A second semiconductor chip is stacked on the first semiconductor chip. The second semiconductor chip includes a second through electrode. A plurality of conductive bumps are interposed between the first semiconductor chip and the second semiconductor chip. The conductive bumps electrically connect the first and second through electrodes to each other. A filling support layer at least partially covers a first surface of the second semiconductor chip facing the first semiconductor chip and at least partially fills spaces between the conductive bumps. An adhesive layer is disposed on the filling support layer at least partially filling the spaces between the conductive bumps and adhering the first and second semiconductor chips to each other.

Description

[0001] This application claims the benefit of priority from Korean Patent Application No. 10-2019-0112510 filed with the Korean Intellectual Property Office (KIPO) on September 11, 2019, the contents of which are hereby incorporated by reference in their entirety. technical field [0002] The present disclosure relates to a semiconductor package, and more particularly, to a semiconductor package including conductive bumps and a method of manufacturing the same. Background technique [0003] In manufacturing a multi-chip package including semiconductor chips electrically connected to each other through through electrodes, after the wafer is supported on a carrier substrate using a substrate support system, the backside of the wafer may be ground to reduce the thickness of the wafer. However, there is a limit to how much the thickness of the wafer can be safely reduced because the wafer may be warped or damaged during the grinding process. Contents of the invention [0004] ...

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However, there is a limit to how much the thickness of the wafer can be safely reduced because the wafer may warp or be damaged during the grinding process

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