A silicon-based thin-film negative electrode sheet for a lithium battery and a preparation method thereof
A technology of silicon-based thin film and negative electrode sheet, which is applied in electrode manufacturing, battery electrode, electrode heat treatment, etc., can solve the problems of uneven dispersion, large particle size of nano-silicon-based material, and reduce the expansion of electrode sheet, and achieve good dispersion and increase volume. Energy density and mass energy density, the effect of suppressing expansion
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Embodiment 1
[0027] Step S1, place the 8 μm thick copper foil coil in the discharge chamber of the magnetron sputtering system, start the vacuum system until the background vacuum is less than 1.0×10 -5 Pa.
[0028] Step S2, turn on the silicon target, the fast photothermal light source, and the graphite target in turn for sputtering, the copper foil travel speed is 1.5m / min, the silicon target sputtering power is 15kw, the graphite target power is 10kw, the annealing temperature is 500°C, and the temperature rises The speed is 80°C / s, and the time is 8s. By matching the walking speed and sputtering power, the thickness of the silicon layer is about 5nm, and the thickness of the graphitic carbon layer is about 20nm.
[0029] Step S3, repeating step S2, repeatedly sputtering the nano-silicon-based thin layer and the graphite-like carbon layer to obtain an active stack, and stop sputtering when the thickness of the active stack reaches 1 μm, and obtain a silicon thin film negative electrode ...
Embodiment 2
[0031] Step S1, place the 4 μm thick copper foil coil in the discharge chamber of the magnetron sputtering system, start the vacuum system until the background vacuum is less than 1.0×10 -5 Pa.
[0032] Step S2, turn on the silicon target, the fast photothermal light source, and the graphite target in turn for sputtering, the copper foil travel speed is 5m / min, the silicon target sputtering power is 22kw, the graphite target power is 5kw, the annealing temperature is 450°C, and the temperature rise The speed is 100°C / s, the annealing time is 4s, and the thickness of the silicon layer is about 10nm and the thickness of the graphite-like carbon layer is about 30nm through the matching of the walking speed and the sputtering power.
[0033] Step S3, repeating step S2, repeatedly sputtering the nano-silicon-based thin layer and the graphite-like carbon layer to obtain an active laminate, and stop sputtering when the thickness of the active laminate reaches 2 μm, and obtain a silic...
Embodiment 3
[0035] Step S1, place the 10 μm thick copper foil coil in the discharge chamber of the magnetron sputtering system, start the vacuum system until the background vacuum is less than 1.0×10 -5 Pa.
[0036] Step S2, turn on the silicon target, the fast photothermal light source, and the graphite target in turn for sputtering, the copper foil travel speed is 1m / min, the sputtering power of the oxide sub-target is 20kw, the graphite target power is 10kw, the annealing temperature is 400°C, and the temperature The rising rate is 100°C / s, the annealing time is 6s, and the thickness of the silicon layer is about 10nm and the thickness of the graphite-like carbon layer is about 30nm through the matching of the walking speed and sputtering power.
[0037] Step S3, repeating step S2, repeatedly sputtering the nano-silicon-based thin layer and the graphite-like carbon layer to obtain an active laminate, and stop sputtering when the thickness of the active laminate reaches 2 μm, and obtain...
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