Method for densifying porous annular substrates by chemical vapour infiltration
A chemical vapor infiltration and densification technology, applied in gaseous chemical plating, coating, metal material coating process, etc., can solve the problems of difficult to control the residence time of precursor gas, difficult to ensure sealing, long execution time, etc., to achieve Effect of reduced densification cycle time, fill rate gain, reduced temperature gradient
Active Publication Date: 2021-03-26
SAFRAN CERAMICS SA
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Problems solved by technology
[0004] This packing has several disadvantages: it is long and complicated to perform, there may be temperature gradients in the chamber, and the seal between the support plate and the stacked parts is difficult to guarantee
Furthermore, it is difficult to control the residence time of precursor gases that are not consumed within the chamber, leading to the formation of undesirable PAHs
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[0030] The chemical vapor infiltration densification process according to the present invention firstly includes a step in which a plurality of unit modules 10 are provided ( FIGS. 5 and 6 ).
[0031] The unit module 10 firstly comprises a structural part 12 ( FIGS. 2 and 3 ) comprising a support plate 14 with a central air inlet 14 a and an air outlet opening 14 b surrounding the central opening. 14a are distributed angularly. The support plate 14 is here in the form of a perforated disc. These outlet openings 14b form a crown around the central inlet opening 14a, ie they form a circle around the central inlet opening 14a. The support plate 14 here has six air outlet openings 14b. The structural member 12 further includes a cylinder 16 extending perpendicularly from the support plate 14 and integral therewith. Thus, the cylinder 16 comprises a first end 16a integral with the support plate 14, and a second free end 16b. The support plate 14 and the cylinder 16 are centered...
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The invention relates to a method for densifying porous annular substrates (18) by chemical vapour infiltration, the method comprising at least the following steps: providing a plurality of unitary modules (10) comprising a support plate (14) upon which a stack of substrates is formed, said support plate having a central gas inlet opening (14a) in communication with an internal volume (17) formedby the central passages (18a) of the stacked substrates and gas discharge openings (14b) angularly distributed around the central opening, and a cylinder (16) which forms a thermal mass, arranged around the substrate stack and having a first end (16a) secured to the support plate and a second, free end (16b); forming stacks of unitary modules in the chamber (34) of a densification furnace; and injecting, into said stacks of unitary modules, a vapour phase which contains a gas precursor of a matrix material to be deposited within the porosity of the substrates.
Description
technical field [0001] The present invention relates to the general field of methods for densifying annular porous substrates by chemical vapor infiltration (CVI). Background technique [0002] For the densification of such substrates, processes are known in particular, in which a stack of substrates is placed in a heated chamber of a densification device and a gaseous phase containing matrix material precursors is introduced into the stack of substrates The interior of the substrate thus forms a matrix in the pores of the substrate. Document FR 2834713 describes this process and the equipment for its implementation. [0003] Larger equipment is typically used when stacks of large numbers of substrates are to be densified. Figure 1 shows a known example of a load that can be used in the chamber 1 of a densification furnace. Chamber 1 is cylindrical around axis X. The load comprises a plurality of stacks of annular porous substrates 2 carried by a single lower support pla...
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IPC IPC(8): C23C16/04C23C16/458C23C16/46C04B35/83C23C16/455C04B41/45
CPCC04B35/83C23C16/045C23C16/455C23C16/4583C23C16/46
Inventor 弗兰克·拉莫鲁雷米·杜邦威廉·罗斯
Owner SAFRAN CERAMICS SA