The invention discloses a preparation method of an AlN ceramic base plate for microelectronic packaging, relates to the field of microelectronic packaging, and in particular relates to a new technology for adding AlN ceramic sintering aids and sintering at a low temperature. The preparation method comprises the following steps: selecting high-purity AlN powder, adding anhydrous yttrium nitrate and anhydrous calcium nitrate as sintering aids, adding an organic solvent, and mixing the materials through a wet method; drying, then calcining the mixed powder at 640-680 DEG C, adding a forming agent, uniformly mixing, performing compression molding, and sintering at 1600-1800 DEG C to prepare an AlN ceramic. According to the preparation method, the sintering aids are added in the form of anhydrous nitrates, so that the content uniformity and distribution uniformity of contents of the sintering aids in the AlN ceramic can be effectively improved, but also the sintering aid powder is tiny in particle size and high in activity, which is helpful for reducing the sintering temperature of the AlN ceramic. The AlN ceramic prepared by the invention is compact in structure, tiny and uniform in grain and excellent in mechanical property and thermology performance.