Semiconductor molybdenum target material and preparation method and application thereof

Abstract

The invention relates to a semiconductor molybdenum target material and a preparation method and application thereof. The preparation method comprises the steps of high-purity molybdenum powder screening and die filling, cold isostatic pressing, sintering, hot-rolling and annealing which are performed sequentially, and then the semiconductor target material is prepared and obtained, wherein a stage temperature rise sintering method is adopted for sintering, the temperature rise rate is gradually decreased at the temperature rise stage of 20-1,500 DEG C, and the temperature rise rate is gradually increased at the temperature rise stage of 1,500-1,900 DEG C. According to the preparation method, a pre-sintering process is omitted; by adopting the stage temperature rise sintering mode and controlling the changing trend of the temperature rise rate, a molybdenum target blank is more uniform and compact, the total impurity content is further reduced, and therefore the molybdenum target material with grain <=40 microns, purity >=99.97% and a uniform internal structure without internal defects is obtained and can be applied to a semiconductor integrated circuit.

Description

technical field [0001] The invention relates to the technical field of magnetron sputtering, in particular to a semiconductor molybdenum target and its preparation method and application. Background technique [0002] In recent years, with the continuous development of technologies in the fields of solar cells, flat panel displays, and semiconductor integrated circuits, thin films deposited by sputtering have high density and good adhesion with substrate materials, so they have been widely used in these fields. Wide range of applications. Molybdenum metal sputtering thin films have broad market prospects in solar cells, flat panel displays, semiconductor integrated circuits and other fields due to their low resistivity, strong thermal stability, good corrosion resistance and good environmental performance. [0003] At present, there are many methods for preparing molybdenum targets for molybdenum metal sputtering films, such as sintering, electron beam smelting, hot isostat...

AI Technical Summary

Problems solved by technology

The preparation method is subjected to hot isostatic pressing after sintering and before hot rolling. Since the hot isostatic pressing method has the disadvantages of expensive equipment and low productivity, the preparation method is not only cumbersome to operate, but also increases the production cost. Facilitate large-scale promotion

[0007] CN110331368A discloses a production method of inclined-plane circular molybdenum target material, said preparation method includes carrying out particle size analysis, bulk density and purity detection to high-purity molybdenum powder, sieving molybdenum powder, mixing molybdenum powder, filling, fastening mould, Cold isostatic pressing, demoulding, sintering, hot rolling, machining, cleaning and packaging, the preparation method sieves the high-purity molybdenum powder into three mesh grades of I, II, and III, and then passes through a mixer to make Coarse particle powder forms a skeleton structure, and finer powder can be filled into the gaps of coarse particles to obtain mixed molybdenum powder with better fluidity during pressing, and then to obtain inclined-plane circular molybdenum targets of different sizes and shapes, but the preparation The sintering process of the method is only divided into two heating stages and the overall time is short, which is not conducive to obtaining highly dense and fine-grained semiconductor molybdenum targets.

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