Preparation method of tantalum-silicon alloy sputtering target material

A sputtering target, tantalum-silicon technology, applied in the field of target preparation, can solve the problems of production technology monopoly, low density of tantalum-silicon alloy sputtering target, long process, etc., to save time cost and energy cost, The effect of uniform internal tissue structure and uniform densification degree

Inactive Publication Date: 2020-12-04
KONFOONG MATERIALS INTERNATIONAL CO LTD
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AI Technical Summary

Problems solved by technology

In recent years, the domestic demand for high-purity tantalum-silicon alloy sputtering targets has increased significantly. On the one hand, domestically produced tantalum-silicon alloy sputtering targets have low density and cannot meet the quality requirements of the high-end electronics industry for sputtering targets. Requirements are only applicable to low-end products. On the other hand, only a few developed countries and regions such as Japan and the United States can produce high-purity and high-density tantalum-silicon alloy sputtering targets, and the production technology is monopolized by foreign countries. Costs remain high for the microelectronics industry
[0006] At present, the prior art has disclosed a method for preparing a tantalum-silicon alloy sputtering target by hot isostatic pressing. For example, CN110952064A discloses a tantalum-silicon alloy sputtering target and its preparation method. , mold loading, cold isostatic pressing, degassing treatment, hot isostatic pressing and machining at 1050-1350 °C, and then a tantalum-silicon alloy sputtering target with a density of more than 99% can be obtained, but the preparation The method not only has a long process and cumbersome operation, but also has the disadvantages of high energy consumption and high cost. It has not effectively reduced the cost of the microelectronics industry and is not suitable for large-scale promotion.
[0007] In addition, the prior art discloses some methods for preparing sputtering targets by hot pressing and sintering. For example, CN108754436A discloses a method for preparing high-purity tantalum-ruthenium alloy targets by vacuum hot pressing Sintering technology, including crushing, ball milling, mixing, mold preparation, mold loading and vibration, temperature rise and pressure, heat preservation, sampling, machining, and then prepared to obtain a density of 10.65 ~ 13.08g / cm 3 High-purity tantalum-ruthenium alloy target, but the preparation method is not only cumbersome to operate, but also not suitable for the preparation of tantalum-silicon alloy sputtering target, because the tantalum-silicon alloy sputtering target is extremely sensitive to temperature during the densification process, and cannot copy existing technology

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  • Preparation method of tantalum-silicon alloy sputtering target material

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preparation example Construction

[0060] figure 1 A flowchart showing a method for preparing a tantalum-silicon alloy sputtering target provided by the present invention specifically includes the following steps:

[0061] (1) Mix tantalum powder and silicon powder evenly according to the mass ratio to obtain tantalum silicon powder;

[0062] (2) the tantalum silicon powder described in step (1) is packed into a mold and sealed;

[0063] (3) hot pressing and sintering the mold sealed in step (2) at 1130-1170° C. to obtain a crude tantalum-silicon alloy sputtering target;

[0064] (4) Machining the crude tantalum-silicon alloy sputtering target obtained in step (3) to obtain a tantalum-silicon alloy sputtering target.

[0065] For ease of understanding the present invention, the present invention enumerates embodiment as follows:

Embodiment 1

[0067] This embodiment provides a method for preparing a tantalum-silicon alloy sputtering target, the preparation method comprising the following steps:

[0068] (1) Mix tantalum powder with a particle size of <75 μm and silicon powder with a particle size of 3 to 5 μm in a powder mixer according to the mass ratio. The mixing adopts the method of dry mixing with silicon balls, and the quality of the balls is controlled. The ratio is 1:10, after 24h mixing evenly, tantalum silicon powder is obtained;

[0069] Wherein, the mass percentage of silicon in the mass ratio is 13.44%, and the rest is tantalum and unavoidable impurities;

[0070] (2) After loading the tantalum-silicon powder described in step (1) into the graphite mould, the tantalum-silicon alloy powder in the mold is firstly smoothed to ensure that the flatness is less than 5mm, and then compacted by manual column pressing , ensure the flatness <0.5mm, and then seal;

[0071] (3) Put the mold sealed in step (2) int...

Embodiment 2

[0075] This example provides a method for preparing a tantalum-silicon alloy sputtering target, except that the step (3) is replaced by one-time heating to the target temperature, and other conditions are exactly the same as in Example 1, and the details are as follows :

[0076] (3) Put the mold sealed in step (2) into a hot-press sintering furnace, evacuate to below 100Pa, then raise the temperature to 1150°C at a heating rate of 5°C / min and keep it warm for 2 hours, and finally heat it up at a temperature of 0.5MPa / min The pressurization rate is pressurized to 30MPa and the temperature is maintained for 2 hours; wherein, during the heating process of heating up to 900-1000°C and 1130-1170°C, it is necessary to control the internal pressure of the sealed mold to <6MPa;

[0077] After the heat preservation and pressure holding is completed, close the hot-press sintering furnace and cool it down, and then fill it with argon until the vacuum indication number is -0.07MPa. When ...

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Abstract

The invention relates to a preparation method of a tantalum-silicon alloy sputtering target material. The preparation method comprises the following steps of (1) uniformly mixing tantalum powder and silicon powder; (2) loading into a mold and sealing; (3) carrying out hot pressed sintering treatment on the sealed mold at 1130-1170 DEG C so as to obtain a tantalum-silicon alloy sputtering target crude product; and (4) machining to obtain the tantalum-silicon alloy sputtering target material. According to the preparation method, the tantalum-silicon alloy sputtering target material with the purity and density meeting the requirements can be prepared, the density reaches 99 percent or above, energy consumption and cost can be reduced, and the preparation method is suitable for large-scale popularization.

Description

technical field [0001] The invention relates to the field of target material preparation, in particular to a method for preparing a tantalum-silicon alloy sputtering target material. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods include vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy, and sputtering coating. [0003] Sputtering is one of the main technol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34B22F3/14B22F5/00C22C27/02
CPCB22F3/14B22F5/00C22C27/02C23C14/3414
Inventor 姚力军潘杰边逸军王学泽李岢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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