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Static random access memory cell and memory

A memory unit, static random technology, applied in the field of microelectronics, can solve problems such as multiple economic investment, and achieve the effect of reducing research and development costs

Pending Publication Date: 2021-03-30
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This often requires multiple plate making, which means more economic investment

Method used

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  • Static random access memory cell and memory
  • Static random access memory cell and memory
  • Static random access memory cell and memory

Examples

Experimental program
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Embodiment Construction

[0014] The specific implementation manners of the SRAM unit and the memory provided by the present invention will be described in detail below in conjunction with the accompanying drawings.

[0015] attached figure 2 Shown is a circuit diagram of the SRAM unit in this specific embodiment, including a first pass transistor PG1 and a second pass transistor PG2 electrically connected in series. Both the first pass transistor PG1 and the second pass transistor PG2 are N-type transistors. Two opposing interlocked first and second inverters are connected in parallel between the first pass transistor PG1 and the second pass transistor PG2. The first inverter is composed of a P-type first pull-up transistor PU1 and an N-type first pull-down transistor PD1, and the second inverter is composed of a P-type second pull-up transistor PU2 and an N-type The second pull-down transistor PD2 is formed.

[0016] Continue to refer to the attached figure 2 , in this specific implementation m...

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Abstract

A static random access memory cell includes a first pass transistor and a second pass transistor electrically connected in series, and two opposed interlocked first and second inverters connected in parallel between the first and second pass transistors, the first inverter includes a first pull-up transistor and a first pull-down transistor, the second inverter includes a second pull-up transistorand a second pull-down transistor, the second inverter comprises a second pull-up transistor and a second pull-down transistor, and a transistor of the static random access memory unit adopts a backgate transistor. According to the invention, the back gate structure connection potential is added on the basis of the original traditional six-transistor memory cell, and the conductivity of the transistor channel is adjusted by adjusting the back gate, so that the aim of adjusting electrical parameters can be fulfilled under the condition of not changing the layout size, and the research and development cost is reduced.

Description

technical field [0001] The invention relates to the field of microelectronics, in particular to a static random access memory unit and a memory. Background technique [0002] SRAM is widely used in electronic equipment because of its good performance. attached figure 1 Shown is a typical six-transistor SRAM storage unit in the prior art. In the design of static memory cells in the prior art, the electrical parameters that can be achieved by the cells are often changed by changing the layout size or changing the process parameters. This often requires multiple plate making, which means more economic investment. The change of process parameters will bring many uncertain factors, so how to reduce the cost caused by the change of process parameters is a problem to be solved in the prior art. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a static random access memory unit and a memory, which can reduce the cost ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C5/06G11C5/02G11C11/411
CPCG11C5/06G11C5/025G11C11/411
Inventor 陈静吕迎欢葛浩谢甜甜王青
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI