Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated circuit, memory device, and method of managing bit line voltage generating circuit

An integrated circuit and clamping voltage technology, applied in the field of computer-readable media, can solve the problems of bandgap buffer occupation, large storage area, long setup time, etc.

Pending Publication Date: 2021-04-02
MACRONIX INT CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, bandgap buffers take up a lot of memory area and require a long setup time

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated circuit, memory device, and method of managing bit line voltage generating circuit
  • Integrated circuit, memory device, and method of managing bit line voltage generating circuit
  • Integrated circuit, memory device, and method of managing bit line voltage generating circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0120] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0121] Figure 1A An example of system 100 is shown. The system 100 includes a device 110 and a host 120 . Device 110 may be a memory system including device controller 112 and memory 116 . The device controller 112 includes a processor 113 and an internal memory 114 .

[0122] In some implementations, device 110 is a storage device. For example, the device 110 may be an embedded multimedia card (eMMC, embedded multimedia card), a secure digital (SD, secure digital) card, a solid-state drive (SSD, solid-state drive) or some other suitable memory. In some implementations, device 110 is a smart watch, a digital camera, or a media player. In some implementations, device 110 is a client device coupled to host 120 . For e...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an integrated circuit, a memory device, and a method of managing a bit line voltage generation circuit, in which the integrated circuit provides a stable clamping voltage to atleast one bit line connected to a memory cell of the memory device. The integrated circuit comprises an operational amplifier for receiving a first reference voltage, a feedback voltage and a compensation current and outputting an output voltage; and an output transistor providing an endpoint voltage as a feedback voltage and an output voltage, where the output voltage is a target voltage relatedto the clamping voltage. The operational amplifier is configured to be unbalanced, and the endpoint voltage of the operational amplifier is smaller than the first reference voltage. And the compensation current compensates the operational amplifier, so that the clamping voltage is substantially constant and independent of the PVT (process voltage temperature) effect.

Description

technical field [0001] The present invention relates to an integrated circuit, a memory device and a method of managing a bit line voltage generating circuit, and more particularly to a system, a method, a computer readable medium for managing a bit line voltage generating circuit of a memory device, circuits and devices. Background technique [0002] Integrated circuit memory devices are becoming smaller and faster. The size and speed limitations of memory devices are caused by the circuitry used to provide a stable bit line clamping voltage to sense data from the memory device. A bit line voltage generating circuit is generally used to maintain a bit line of a memory cell of a memory at a stable clamping voltage. In some cases, a bandgap buffer is used between the bandgap reference system and the bit line voltage generation circuit to convert the bandgap reference voltage from the bandgap reference system into a relatively low voltage, which in turn generates the bit li...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F1/30
CPCG06F1/30G05F3/247H03F3/45183G11C5/147G11C16/30G11C7/062G11C7/12G11C16/24G11C7/06H03F3/45269
Inventor 杨尚辑柯思宇
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products