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Programming method and system of reference unit in nonvolatile memory

A non-volatile memory and reference unit technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of high cost, long programming test time, low efficiency, etc., to reduce test cost, reduce programming times, The effect of reducing test time

Pending Publication Date: 2021-04-02
PUYA SEMICON SHANGHAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a programming method and system, electronic equipment, and readable storage medium of a reference unit in a non-volatile memory, so as to solve the problems of long programming test time, low efficiency and high cost of reference units in the prior art

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  • Programming method and system of reference unit in nonvolatile memory
  • Programming method and system of reference unit in nonvolatile memory
  • Programming method and system of reference unit in nonvolatile memory

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Embodiment Construction

[0028] The following is attached Figure 1-3 and specific implementation modes A method and system for programming a reference unit in a non-volatile memory proposed by the present invention, electronic equipment, and a readable storage medium are further described in detail. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and all use imprecise scales, which are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention. In order to make the objects, features and advantages of the present invention more comprehensible, please refer to the accompanying drawings. It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those who are familiar with this technology to understan...

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Abstract

The invention provides a programming method and system for a reference unit in a nonvolatile memory, and the method comprises the steps: S1, carrying out the erasing operation of the reference unit, and reducing the threshold voltage of the reference unit; S2, performing coarse adjustment programming, and continuously applying programming voltage to the reference unit until the threshold voltage of the reference unit is close to a preset voltage value; S3, performing fine adjustment programming, and applying multiple programming pulses to the reference unit until the threshold voltage of the reference unit meets the preset voltage value. The problems of long reference unit programming test time, low efficiency and high cost in the prior art can be solved.

Description

technical field [0001] The invention relates to the technical field of nonvolatile memory, in particular to a programming method and system, electronic equipment, and a readable storage medium of a reference unit in the nonvolatile memory. Background technique [0002] When reading data stored in a nonvolatile memory, one method is to use a reference cell whose threshold voltage is adjusted to a desired voltage value. Apply the same voltage to the gate and drain of the memory cell and the reference cell, and judge whether the data stored in the memory cell is 0 or 1 by comparing the current of the memory cell with the current of the reference cell. [0003] The process of adjusting the threshold voltage of the reference cell during the memory test is as follows: firstly perform an erase operation on the reference cell, so that the threshold voltage of the reference cell is in a lower range. Then, the programming operation is performed on the reference cell. In order to make...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34G11C29/50
CPCG11C16/10G11C16/3404G11C29/50004
Inventor 陈涛
Owner PUYA SEMICON SHANGHAI CO LTD