Programming method of storage unit

A storage unit and programming method technology, applied in the storage field, can solve problems such as sacrificing programming speed and difficult programming of storage units

Inactive Publication Date: 2016-12-07
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the manufacturing process of Flash chips, some memory cells are difficult to be programmed. The existing solution is: in order to ensure the correctness of programming, increase the number of programming times, but at the expense of programming speed

Method used

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  • Programming method of storage unit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] figure 2 It is a flow chart of a method for programming a memory cell provided by Embodiment 1 of the present invention. This embodiment is applicable to programming some memory cells that are difficult to be successfully programmed. join figure 2 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0031] S110. Perform a programming operation on the memory cell corresponding to the current programming address according to the programming instruction.

[0032] By writing program codes, the flash memory can be controlled to perform three main operations, which are read operation, write operation and erase operation. Among them, the write operation is also called programming operation, that is, the operation of writing 0 to the storage unit is completed.

[0033] It should be noted that the principle of programming a memory cell is that by applying corresponding programming voltages to the gate and drain o...

Embodiment 2

[0042] image 3 It is a flow chart of a memory cell programming method provided by Embodiment 2 of the present invention. This embodiment is further optimized on the basis of Embodiment 1. Before increasing the pulse width of the programming voltage, it is added: programming through the programming counter The number of failed operations is accumulated. The advantage of this optimization is that it avoids unlimited programming operations on some memory cells, which makes the entire program fall into an infinite loop. see image 3 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0043] S210. Perform a programming operation on the storage unit corresponding to the current programming address according to the programming instruction.

[0044] S220. Perform a program verification on the storage unit, and check whether the current state of the storage unit is programmed successfully.

[0045] S230. If yes, end th...

Embodiment 3

[0057] Figure 4 It is a flow chart of a programming method for a storage unit provided by Embodiment 3 of the present invention. This embodiment is further optimized on the basis of the above-mentioned embodiments, and an operation of judging whether the current programming address is the last programming address is added. The advantage of such optimization is that the programming operation on the entire programming area can be quickly completed. see Figure 4 The programming method of the storage unit provided in this embodiment specifically includes the following steps:

[0058] S310. Perform a programming operation on the storage unit corresponding to the current programming address according to the programming instruction.

[0059] S320. Perform a programming verification on the storage unit, and check whether the current state of the storage unit is successfully programmed, and if so, perform step S330, otherwise perform step S360.

[0060] S330. Determine whether the...

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Abstract

The invention discloses a programming method of a storage unit. The method includes the steps that programming operation is conducted on the storage unit corresponding to a current programming address according to a programming instruction; programming verification is conducted on the storage unit, whether the current state of the storage unit is a successfully programmed state or not is verified, if yes, current programming operation ends, and otherwise, pulse width of programming voltage is increased and the programming operation conducted on the storage unit corresponding to the current programming address is repeated till programming is successful. According to the programming method of the storage unit, when the storage unit is not successfully programmed through one time of programming operation, quick programming of the storage unit is achieved by continuously increasing the pulse width of programming voltage along with increase of the number of programming times when the storage unit is programmed, and programming speed is increased.

Description

technical field [0001] The embodiment of the present invention relates to the technical field of storage, and in particular to a programming method of a storage unit. Background technique [0002] Non-volatile flash memory (nor flash / nand flash) is a very common memory chip, which has the advantages of random access memory (RAM) and read-only memory (Read-Only Memory, ROM). It will not be lost. It is a memory that can be electrically erased and written in the system. At the same time, its high integration and low cost make it the mainstream of the market. The Flash chip is composed of thousands of internal storage units, each storage unit stores one bit of data, multiple storage units form a page, and multiple pages form a block. It is precisely because of this special physical structure that in nor flash / In nandflash, data is read / written (program operation) in units of pages, and data is erased in units of blocks. [0003] In a Flash chip, a storage unit can be regarded...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/34
CPCG11C16/3459
Inventor 潘荣华薛子恒
Owner GIGADEVICE SEMICON (BEIJING) INC
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