A charge pump circuit and non-volatile memory

Abstract

The invention discloses a charge pump circuit and a non-volatile memory. When NOR flash is switched from a normal state to a standby state, a negative high-voltage circuit module is used to make the output voltage of the negative charge pump core module reach a preset value before being activated. The negative low-voltage circuit module can effectively shorten the output voltage establishment time of the negative charge pump core module, improve chip performance and user experience; when NOR flash switches from normal state to standby state, the charge pumps of all levels in the negative charge pump core module are connected in parallel work, which makes the driving ability of the negative charge pump core module stronger, and further shortens the output voltage establishment time of the negative charge pump core module; the negative high voltage circuit module and the negative low voltage circuit module share a negative charge pump core module, which can reduce the NOR flash The area brings advantages in chip area; the negative low-voltage circuit module adopts a low-power circuit module to reduce the power consumption of the circuit in the standby state.

Description

technical field [0001] The invention relates to the technical field of chip circuits, in particular to a charge pump circuit and a nonvolatile memory. Background technique [0002] With the vigorous development of 5G communication technology and the Internet of Things, more and more devices are connected to the Internet, and NORflash is considered to be the first choice for code flashing applications of Internet of Things devices. In NOR flash, if there is an over-erased unit on a certain bit line, when reading the data of other non-over-erased storage units, the influence of the over-erased unit may cause errors in reading data, which in turn affects networking. The interaction between the device and the outside world. [0003] Such as figure 1 with figure 2 As shown, they are the negative high voltage generation circuit for erasing and the negative low voltage generation circuit for avoiding data read errors caused by over-erasing, which mainly include sampling circuit...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a charge pump circuit and a non-volatile memory, aiming to solve the problem that the existing charge pump circuit has a long voltage build-up when switching to standby mode, and the long-term mode switching seriously affects the performance of the chip and the user. problem of experience

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