Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

System based on semiconductor power device and module

A power device and semiconductor technology, which is applied in the field of semiconductor power device processing, can solve problems such as few detection parameters, unfavorable product information, and single function, and achieve the effects of precision calibration, product quality improvement, and production efficiency improvement

Pending Publication Date: 2021-04-16
张家港迪源电子科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing test system has a single function and few detection parameters, which is not conducive to fully grasping the information of the product

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System based on semiconductor power device and module

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] see figure 1 , the present invention provides a technical solution: a system based on semiconductor power devices and modules, including a semiconductor wafer test module, a dynamic test module, a transient test module, a working condition test module, a high temperature characteristic test module and a main control computer:

[0027] The semiconductor wafer test module is connected to the main control computer, and the semiconductor wafer test module is used to perform alignment, inspection and identification through machine vision to help manufacture high-quality wafers used in integrated ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is applicable to the technical field of semiconductor power devices, and provides a system based on a semiconductor power device and a module. Wafer processing automation can be realized by arranging a semiconductor wafer test module, a dynamic test module, a transient test module, a working condition test module and machine vision, precision calibration is realized, and a brake pad and a probe tip are detected and jointed. The critical dimension of the crystal structure is measured. The dynamic test module is used for checking the production quality and verifying the design performance by collecting dynamic characteristic data of a large batch of power devices on line and screening and characterizing the dynamic characteristics; and the transient test module is used for obtaining the performance of different components of the chip and the device. The working condition test module can collect the voltage, resistance and inductance parameters of the semiconductor power device under the same working condition. According to the invention, the parameter information of the semiconductor power device can be fully mastered, the production efficiency is improved, and the product quality is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power device processing, and in particular relates to a system based on semiconductor power devices and modules. Background technique [0002] The reliability of a power device is usually measured by the maximum energy that the device can absorb without failure. The maximum energy is limited by the structural parameters inside the power device, and the maximum energy is seriously affected by the electrothermal characteristics inside the device. [0003] In the production process of semiconductor power devices, it needs to be tested to obtain product quality parameters, which helps to improve production efficiency and product quality. However, the existing testing system has a single function and few testing parameters, which is not conducive to comprehensively and fully grasping product information. Contents of the invention [0004] The present invention provides a system based on semico...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01D21/02H01L21/66
Inventor 陈宇严丽红辛藤
Owner 张家港迪源电子科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products