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Encapsulated memory restoration method and device, storage medium and electronic equipment

A repair method and memory technology, applied in the direction of response error generation, redundant data error detection in operation, etc., can solve the problem of inability to realize the repair operation of failed storage units, etc., so as to prolong the service life and reduce the failure rate. Effect

Active Publication Date: 2021-04-16
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present disclosure is to provide a packaged memory repair method and device, computer-readable storage medium, and electronic equipment, so as to overcome the problem that all repair operations of failed storage units cannot be realized at least to a certain extent

Method used

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  • Encapsulated memory restoration method and device, storage medium and electronic equipment
  • Encapsulated memory restoration method and device, storage medium and electronic equipment
  • Encapsulated memory restoration method and device, storage medium and electronic equipment

Examples

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Embodiment Construction

[0056] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals denote the same or similar parts in the drawings, and thus their repeated descriptions will be omitted.

[0057] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or mo...

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Abstract

The invention relates to a packaged memory restoration method and device, a computer readable storage medium and electronic equipment, and the method comprises the steps: writing the failure information of a memory into an SPD in a memory testing process, wherein the failure information comprises a failure address; after the equipment is started, reading the failure address from the SPD, and determining the number of failure lines where the failure address is located; when the number of the failure lines is smaller than or equal to the number of redundant lines, adopting the redundant lines to repair the failure lines; and when the number of the failure lines is greater than the number of the redundant lines, loading the failure information into a register. According to the method and the device, the failure address is completely repaired.

Description

technical field [0001] The present disclosure relates to the technical field of integrated circuits, in particular, to a packaged memory repair method and device, a computer-readable storage medium, and electronic equipment. Background technique [0002] A computer system generally consists of five parts: a processor, a memory, an input device, an output device, and a bus. Among them, the memory is used to store instructions and data required for the processor to run. The memory is generally realized by using a dynamic random access memory (Dynamic Random Access Memory, DRAM) of a semiconductor process. [0003] A DRAM typically includes one or more arrays of memory cells, each memory cell array including memory cells arranged in a matrix of rows and columns. DRAMs also typically include redundant memory cells that can be used to functionally replace failed memory cells in the memory cell array. [0004] However, since the redundant storage units available in each bank gro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/14
CPCG06F11/14
Inventor 瞿振林张文喜
Owner CHANGXIN MEMORY TECH INC
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