Novel high-voltage transmission gate circuit

A high-voltage transmission, gate circuit technology, applied in electrical components, electronic switches, pulse technology, etc., can solve the problems of inability to cascade output nodes, input signal interference, etc., and achieve the effect of high isolation and low interference

Pending Publication Date: 2021-04-16
南京中科微电子有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the deficiencies in the prior art, the present invention provides a new type of high-voltage transmission gate circuit, which can overcome the shortcomings in the prior art that the gate control signal interferes with the input signal and the output nodes cannot be cascaded.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel high-voltage transmission gate circuit
  • Novel high-voltage transmission gate circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the specific implementation, structure, characteristics and features of the new high-voltage transmission gate circuit proposed according to the present invention will be described below in conjunction with the accompanying drawings and preferred embodiments. Efficacy, detailed as follows. Apparently, the described embodiments are some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0039] In this embodiment, a new type of high-voltage transmission gate circuit is provided, such as figure 2 As shown, the novel high-voltage transmission gate circuit includes a gate drive circuit 21 and a high-voltage switch tube circuit 22; wherein,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of high-voltage analog integrated circuit design, and particularly discloses a novel high-voltage transmission gate circuit which comprises a gate drive circuit and a high-voltage switching tube circuit. The gate drive circuit is used for providing a high-voltage gate control signal for the high-voltage switching tube circuit under the control of a switching current signal; and the high-voltage switching tube circuit is used for isolating or transmitting a high-voltage input signal according to the high-voltage grid control signal. The novel high-voltage transmission gate circuit provided by the invention has the advantages of high isolation, low interference and capability of being directly cascaded, and particularly can overcome the defects that a transmission gate interferes with a signal source and output nodes cannot be cascaded in the prior art.

Description

technical field [0001] The invention relates to the technical field of high-voltage analog integrated circuit design, and more specifically, relates to a novel high-voltage transmission gate circuit. Background technique [0002] The high-voltage transmission gate circuit is used in various systems, and it is the key circuit of the high-voltage multiplexer, especially in the battery management system, which is used to realize the gating of different battery signals. [0003] In the high-voltage BCD process, the DMOS device can realize the high voltage resistance of the drain and the source, but due to the limitation of the process, the gate and the source generally cannot withstand high voltage. Therefore, the gate control signal of the high-voltage transmission gate needs to be carefully designed. [0004] Traditional high-voltage transmission gate circuits such as figure 1 As shown, the magnitude of the gate control signals of the high-voltage switch tubes P1 and P2 in t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/687
Inventor 李明明潘文光
Owner 南京中科微电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap