Noble metal quantum dots modified multilayer nanocomposite film gas sensor preparation method
A gas sensor and nanocomposite technology, which is applied in the fields of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc. Reduce costs and other issues to achieve the effects of reduced size, high consistency, and reduced costs
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0049] The preparation method of the gas sensor based on the noble metal quantum dot modified multi-layer nanocomposite film of the present invention is given below, such as image 3 shown, including the following steps:
[0050] 1) Select a silicon wafer substrate that has undergone double-sided thermal oxidation and nitriding treatment, as shown in Figure 4(c); the selected silicon wafer is an N-type doped silicon wafer;
[0051] 2) Apply EPG535 photoresist evenly to the selected silicon wafer substrate at a low speed of 500r / min for 6s and a high speed of 1500r / min for 40s, see Figure 4(d);
[0052] 3) Dry the silicon wafer coated with photoresist at 80°C-100°C for 5min-10min, and expose for 7s-9s to obtain the sensitive material pattern;
[0053] 4) Use alkaline solution to develop the silicon wafer etched with sensitive material pattern for 17s-25s, dry it with nitrogen gas and dry it at 100°C-120°C for 10min-20min; the concentration of alkaline solution is 5‰NaOH, (5‰ ...
Embodiment 1
[0069] 1) Select a silicon wafer with N-type doping, crystal orientation 100, resistance 1-5ohm.cm, thickness 400um, and then thermally oxidize both sides to form an oxide layer with a thickness of 500nm, and deposit Si on both sides by LPCVD 3 N 4 , the thickness of the formed desalination layer is 150nm;
[0070] 2) Apply EPG535 photoresist evenly to the substrate of the silicon wafer with the desalinated layer after the double-sided oxide layer at a low speed of 500r / min for 6s, and at a high speed of 1500r / min for 40s;
[0071] 3) Bake the silicon wafer evenly covered with photoresist at 95°C for 5 minutes, and then expose the photoresist for 7 seconds with the designed sensitive material mask to obtain the designed sensitive material pattern;
[0072] 4) Place the exposed silicon wafer in a 5‰ NaOH solution for 20 seconds, dry it with nitrogen, and bake it at 110°C for 10 minutes;
[0073] 5) Put the silicon wafer obtained in step 4) into the sputtering machine for fron...
Embodiment 2
[0084] 1) Select a silicon wafer with N-type doping, crystal orientation 100, resistance 1-5ohm.cm, thickness 400um, and then thermally oxidize both sides to form an oxide layer with a thickness of 500nm, and deposit Si on both sides by LPCVD 3 N 4 , the thickness of the formed desalination layer is 150nm;
[0085] 2) Apply EPG535 photoresist evenly to the substrate of the silicon wafer with the desalinated layer after the double-sided oxide layer at a low speed of 500r / min for 6s, and at a high speed of 1500r / min for 40s;
[0086] 3) Bake the silicon wafer evenly covered with photoresist at 80°C for 8 minutes, and then expose the photoresist for 9 seconds with the designed sensitive material mask to obtain the designed sensitive material pattern;
[0087] 4) Place the exposed silicon wafer in a 5‰KOH solution for 17s, dry it with nitrogen, and bake it at 120°C for 15min;
[0088] 5) Put the silicon wafer obtained in step 4) into the sputtering machine for front-side sputter...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More