A kind of n-type highly conductive Si-based negative electrode material and preparation method thereof

A high-conductivity, negative electrode material technology, applied in battery electrodes, circuits, electrical components, etc., can solve the problems of easy gasification and volatilization of doping sources, and achieve easy control of phosphorus doping amount, high conductivity, and high purity. Effect

Active Publication Date: 2022-05-06
HEFEI GUOXUAN HIGH TECH POWER ENERGY
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the traditional Si doping method is mainly through calcining the dopant source and Si after ball milling. The calcination temperature of this method usually exceeds 1000°C, and Si and the dopant source undergo a high-temperature diffusion reaction. However, the dopant source is easily vaporized in a high-temperature environment. Volatile, unable to fully react with Si

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of n-type highly conductive Si-based negative electrode material and preparation method thereof
  • A kind of n-type highly conductive Si-based negative electrode material and preparation method thereof
  • A kind of n-type highly conductive Si-based negative electrode material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A preparation method of n-type highly conductive Si-based negative electrode material, comprising the following steps:

[0029] 1. Take 0.5g Mg 2 Si, 2.6g AlBr 3 , 0.5g (NH 4 ) 2 HPO 4 Add 50ml of cyclohexane solution, mix evenly, transfer to the reaction kettle, pass nitrogen into the reaction kettle to exhaust the air, keep it at 180°C for 24h; after the reaction, wash the sample and dry it.

[0030] 2. Put the dried product into 50% hydrochloric acid solution, pickle and stir for 6 hours, then wash the sample with deionized water, and dry it in a 60°C oven to obtain the product, which is to be tested.

[0031] The prepared Si-based materials were characterized by XRD such as figure 1 As shown, where "O" represents the peak, representing the peak of Si in the XRD pattern, from figure 1 It can be seen that the prepared Si-based material corresponds to the Si spectrum; from figure 2 It can be seen that the prepared n-type Si-based material is in the shape of sph...

Embodiment 2

[0033] A preparation method of n-type highly conductive Si-based negative electrode material, comprising the following steps:

[0034] 1. Take 0.5g Mg 2 Si, 2.4g AlBr 3 , 1.5g Na 3 PO 4 Add 50ml of cyclohexane solution, mix evenly, transfer to the reaction kettle, pass nitrogen into the reaction kettle to discharge the air, keep the reaction at 160°C for 48h; after the reaction, wash the sample and dry it.

[0035] 2. Put the dried product into 50% hydrochloric acid solution, pickle and stir for 5 hours, then wash the sample with deionized water, and dry it in an oven at 60°C to obtain the product.

Embodiment 3

[0037] A preparation method of n-type highly conductive Si-based negative electrode material, comprising the following steps:

[0038] 1. Take 0.5g Mg 2 Si, 3.4g AlBr 3 , 2.2g NH 4 h 2 PO 4 Add 50ml of cyclohexane solution, mix evenly, transfer to the reaction kettle, pass nitrogen into the reaction kettle to discharge the air, keep the reaction at 200°C for 10h; after the reaction, wash the sample and dry it.

[0039] 2. Put the dried product into 50% hydrochloric acid solution, pickle and stir for 8 hours, then wash the sample with deionized water, and dry it in an oven at 60°C to obtain the product.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to view more

Abstract

The invention discloses an n-type high-conductivity Si-based negative electrode material and a preparation method thereof, and relates to the technical field of negative electrode materials for lithium ion batteries. 2 Si is silicon source, AlBr 3 As the oxidant, silicon source, oxidant and phosphorus source are added into the solvent, and the phosphorus-doped n-type high-conductivity Si-based negative electrode material is synthesized in situ by solvothermal method. The invention adopts the solvothermal method to synthesize the phosphorus-doped n-type high-conductivity Si-based negative electrode material in-situ, the synthesis process is carried out at a lower temperature, the reaction is sufficient, the phosphorus doping amount is easy to control, and no toxic and harmful substances are used in the preparation. Reagents, green and safe, and do not require high temperature environment. The prepared Si-based material has high purity and high conductivity. During the slurry mixing process, the proportion of conductive agent used can be reduced and the energy density of the battery can be improved; using it as a negative electrode material can effectively reduce the volume resistivity and provide more electrons The transmission channel has a higher lithium storage capacity, thereby improving the battery rate performance and reducing polarization.

Description

technical field [0001] The invention relates to the technical field of negative electrode materials for lithium ion batteries, in particular to an n-type highly conductive Si-based negative electrode material and a preparation method thereof. Background technique [0002] With the rapid development of electronic products and electric vehicles, lithium-ion batteries are becoming increasingly important. Compared with traditional lead-acid batteries, lithium batteries have the characteristics of high energy density, no memory effect, and many cycles. For electric vehicles, there is an urgent need for lithium-ion batteries with high energy density and high rate performance. At this stage, graphite is mostly used as the negative electrode of lithium-ion batteries, and its theoretical specific capacity is 375mAh / g, which is much smaller than Si4200mAh / g; at the same time, Si is the second most abundant element in the earth's crust, and its source is relatively abundant. The lithiu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/38H01M10/0525
CPCH01M4/386H01M10/0525Y02E60/10
Inventor 丁男林少雄辛昱赵宇飞许家齐
Owner HEFEI GUOXUAN HIGH TECH POWER ENERGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap