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A kind of three-dimensional memory and its manufacturing method

A manufacturing method and memory technology, applied in semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of increasing the number of stacked layers and unstable three-dimensional memory structure, so as to ensure stability and reduce the risk of rupture or collapse Effect

Active Publication Date: 2021-10-15
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0004] In view of this, the present invention provides a three-dimensional memory and its manufacturing method to solve the problem that the increase in the number of stacked layers of the stacked structure in the prior art leads to an unstable structure during the manufacturing process of the three-dimensional memory

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  • A kind of three-dimensional memory and its manufacturing method
  • A kind of three-dimensional memory and its manufacturing method
  • A kind of three-dimensional memory and its manufacturing method

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Embodiment Construction

[0044] As in the background art, as the number of stacked structures in the three-dimensional memory increases, the difficulty in ensuring the stability of the structure in each manufacturing process also increases during the manufacturing process of the three-dimensional memory.

[0045] The inventor has found that the reasons for the above problems are as follows:

[0046] In the fabrication process of three-dimensional memory, such as figure 1 As shown, usually a stack structure 11, a channel structure 12 passing through the stack structure 11, and a gate line gap (Gate Line Slit, GLS) 13 are formed on the substrate 10 first, and then, as figure 2 As shown, the sacrificial layer 14 between the substrate 10 and the stacked structure 11 is etched by feeding an etching gas or solution through the gate line gap 13 to form an opening region 15, and then, as image 3 As shown, an epitaxial structure layer 16 is formed in the opening region 15 through a selective epitaxial grow...

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Abstract

The invention provides a three-dimensional memory and a manufacturing method thereof, comprising: providing a substrate having a first connection layer and a first sacrificial layer; etching the first sacrificial layer to form a first groove and a second groove groove, the first groove is located on one side of the gate gap region to be formed, the second groove is located on the other side of the gate gap region to be formed, and the first groove and the second groove are perpendicular to the gate gap to be formed The direction of the extension direction of the gap area is staggered; the second connection layer is formed on the first sacrificial layer, the second connection layer fills the first groove and the second groove, and the first connection is formed in the first groove structure, forming a second connection structure in the second groove, and the material of the second connection layer is different from that of the first sacrificial layer. Since the first connecting structure and the second connecting structure can support the stacked structure on top of it, the risk of cracking or collapsing of the stacked structure is reduced, and the stability of the structure is ensured during the fabrication of the three-dimensional memory.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, and more specifically, to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] Three-dimensional memory (3D NAND) stacks memory cells in a direction perpendicular to the substrate, and can form more memory cells in a smaller area. Compared with traditional two-dimensional memory, it has a larger storage capacity and is the current memory A major direction of development in the field. [0003] In the process of fabricating a three-dimensional memory, a stacked structure needs to be fabricated on a substrate, and the stacked structure includes multiple layers of oxide layers and nitride layers arranged alternately. With the increase in the demand for three-dimensional memory capacity, in order to obtain a larger storage capacity per unit chip area, it is necessary to increase the number of stacked layers in the stacked structure in the th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11568H01L27/1157H01L27/11578H10B43/30H10B43/20H10B43/27H10B43/35
CPCH10B43/35H10B43/27H10B43/10H10B41/10H10B41/27H10B41/35
Inventor 王二伟郑晓芬顾立勋
Owner YANGTZE MEMORY TECH CO LTD
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