Solar-blind ultraviolet photoelectrochemical photodetector and preparation method thereof

A photodetector and photoelectrochemical technology, which is applied in photometry using electric radiation detectors, electrochemical variables of materials, scientific instruments, etc., can solve problems such as slow redox reaction rate, poor photodetection effect, and poor crystal quality , to achieve the effect of optimizing the adsorption and desorption process, simple packaging structure, and low manufacturing process requirements

Active Publication Date: 2022-05-13
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are not many studies on photoelectrochemical photodetectors, including photoelectrochemical photodetectors in the infrared and ultraviolet bands, and photoelectrochemical photodetectors in the sun-blind ultraviolet band are even less researched.
[0005] The existing photoelectrochemical photodetector preparation materials are mainly powder materials or nanosheet materials, which have poor crystal quality, slow redox reaction rate, and poor photodetection effect, such as gallium oxide nanomaterials

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  • Solar-blind ultraviolet photoelectrochemical photodetector and preparation method thereof
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  • Solar-blind ultraviolet photoelectrochemical photodetector and preparation method thereof

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Embodiment 1

[0059] One aspect of the present invention proposes a novel solar-blind ultraviolet photoelectrochemical photodetector, Figure 1A is a schematic diagram of AlGaN nanowires in an embodiment of the present invention. The novel solar-blind ultraviolet photoelectrochemical photodetector includes a photocathode, and the photocathode includes a substrate 110, and also includes an AlGaN nanowire 120 grown on the surface of the substrate 110, thereby constituting the photocathode of the novel photoelectrochemical photodetector proposed by the present invention The basic structure of 100. Wherein, GaN-based nanowires include n-type GaN-based nanowires and p-type GaN-based nanowires. Those skilled in the art should understand that the nanowire structure can be regularly arranged, such as nanowire structures prepared by directional growth, and can also include irregularly arranged nanowire structures. The so-called "rule" can be understood as whether the arrangement of nanowires has Pe...

Embodiment 2

[0085] The present invention proposes a gallium nitride-based material nanowire structure applied to photodetectors, and correspondingly proposes a preparation method for the material structure, overcomes technical difficulties in this field, and achieves a breakthrough and unexpected technology Effect. Among them, those skilled in the art should understand that the nanowire structure can be a regular arrangement, such as a nanowire structure prepared by directional growth, or an irregular arrangement of nanowire structures. The so-called "rule" can be understood as the arrangement of nanowires. Periodic; the so-called "irregular" can be understood as the arrangement of the nanowires does not have periodicity, and can also be understood as the length, diameter, spacing between adjacent nanowires, nanometers, etc. The growth angle of the line (relative to the substrate) is inconsistent and irregular. In addition, in the introduction of gallium nitride-based materials in the pr...

Embodiment 3

[0112] One aspect of the present invention proposes a sun-blind ultraviolet photoelectrochemical photodetector, such as Figure 8A It is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector GaN-based nanohole array in an embodiment of the present invention, and Figure 8B It is a schematic diagram of a solar-blind ultraviolet photoelectrochemical photodetector modified GaN-based nanopore array of co-catalyst nanoparticles in an embodiment of the present invention. The photodetector includes a photoelectrode, and the photoelectrode includes a substrate 810 and a substrate 810. The array 830 of GaN-based nanoholes 840 formed on the surface of the substrate 810 constitutes the basic structure 800 of the photocathode of the novel photoelectrochemical photodetector proposed by the present invention.

[0113] Among them, those skilled in the art should understand that the nanopore structure can be a regular arrangement, such as a nanopore structure pre...

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Abstract

The invention discloses a sun-blind ultraviolet photoelectrochemical photodetector and a preparation method thereof. The photodetector includes a photoelectrode, and the photoelectrode includes a substrate, and also includes a p-type / n photoelectrode formed on the surface of the substrate. Type-doped GaN-based (Gallium Nitride, GaN for short)-based nanohole array. In addition, the modification of co-catalyst nanoparticles on GaN-based nanopore arrays as photoelectrodes optimizes the adsorption and desorption process of molecules and improves the redox reaction rate of photoelectrodes in solution. At the same time, further optimize the design of the photoelectrochemical device, change the environment of the electrolyte solution, and finally realize a new type of solar-blind ultraviolet light detector with high responsivity, high sensitivity, fast response, economical and environmental protection, and self-supply (no need for additional electric energy).

Description

technical field [0001] The invention relates to the technical field of photoelectrochemical photodetectors, in particular to a sun-blind ultraviolet photoelectrochemical photodetector and a preparation method thereof. Background technique [0002] Photodetectors (i.e., light detectors), devices that capture light signals and convert them into electrical signals, are widely used in imaging, communication, sensing, computing, emerging wearable devices, and space domain detection. Optical detectors are widely used in various fields of military and national economy. [0003] Most of today's photodetectors are based on a simple metal-semiconductor-metal (Metal-Semiconductor-Metal, or MSM) structure. MSM structured light detectors need to apply an external bias voltage during operation, which not only consumes power, but also improves the responsivity and response speed. etc. also need to be improved. Compared with photodetectors composed of traditional MSM semiconductor Schottk...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J1/42G01N27/30G01N27/414
CPCG01J1/429G01N27/305G01N27/4146
Inventor 孙海定汪丹浩张昊宸黄晨
Owner UNIV OF SCI & TECH OF CHINA
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