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Micro-LED array of transparent electrode structure and production method

A technology of transparent electrodes and arrays, applied in the field of optoelectronics, which can solve the problems of the influence of Micro-LED light output and the large area of ​​P-type metal electrodes.

Active Publication Date: 2021-06-01
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the small size of the Micro-LED, the area of ​​the P-type metal electrode accounts for a large proportion, so the area of ​​the P-type metal electrode has a great impact on the light output of the Micro-LED.

Method used

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  • Micro-LED array of transparent electrode structure and production method

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Embodiment Construction

[0027] In order to make the technical problems and technical solutions to be solved by the present invention clearer, the detailed description will be described below in conjunction with the accompanying drawings.

[0028] refer to figure 1 , figure 2 A Micro-LED array with a transparent electrode structure, comprising:

[0029] Substrate 2;

[0030] N-type GaN 3 prepared on the substrate 2;

[0031] The quantum well active region 4 is prepared on the N-type GaN 3;

[0032] P-type GaN 5 prepared on the quantum well active region 4;

[0033] The step 12 is formed by etching the epitaxial material to N-type GaN;

[0034] Transparent electrode ITO 6, prepared on P-type GaN and step sidewalls and N-type GaN;

[0035] The N-type metal electrode 9 is prepared on the N-type GaN;

[0036] The P-type metal electrode is prepared on the transparent electrode on the N-type GaN;

[0037] Pixel unit deep isolation trench 10, etch the epitaxial material to the substrate to electrica...

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Abstract

The invention discloses a Micro-LED array of a transparent electrode structure and a production method. The structure mainly comprises light-emitting pixel units, pixel unit deep isolation grooves and a substrate. Each light-emitting pixel unit comprises an N-type GaN, a quantum well active region, a P-type GaN, an insulating layer, a transparent electrode, an N-type metal electrode and a P-type metal electrode. ITO is used as a transparent electrode and completely covers the P-type GaN, the P-type metal electrode is prepared on the ITO on the N-type GaN, a forward current flows to the ITO through the P-type metal electrode and then is led into the light-emitting layer, and an influence on the light-emitting efficiency due to the large area proportion of the P-type metal electrode of the Micro-LED is avoided. The refractive index of the ITO is between that of the air and that of an epitaxial material so that the light-emitting angle can be increased, light escape is facilitated, the luminous flux of the Micro-LED array is increased, and the Micro-LED array shows higher brightness under the same current.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a Micro-LED array with a transparent electrode structure and a preparation method. Background technique [0002] As a light-emitting device, LED (Light emitting diode) plays an important role in life. In the field of lighting, incandescent lamps have been replaced, saving a lot of energy. In the field of display, such as liquid crystal display (LCD) and organic light-emitting diode (OLED), micro-light-emitting diode (Micro-LED) display technology, etc., provide people with high-quality display panels, especially the rapid development of Micro-LED display in recent years. Technology, as a unique display, is widely used in smart glasses, head-mounted displays (HMDs) and head-up displays (HUDs) and other fields, and has attracted extensive attention in the industry. Compared with traditional LCD and OLED, Micro LED has the advantages of low power consumption, high brightne...

Claims

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Application Information

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IPC IPC(8): H01L33/38H01L33/42H01L33/36H01L33/44H01L27/15
CPCH01L27/156H01L33/42H01L33/36H01L33/44H01L33/385H01L2933/0025H01L2933/0016
Inventor 郭伟玲陈佳昕李梦梅冯玉霞郭浩
Owner BEIJING UNIV OF TECH