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Micro-electromechanical structure with a functional element which is arranged in a cavity of the micro-electromechanical structure

A technology of micro-electromechanical structure and functional components, applied in the direction of microelectronic micro-structure devices, micro-structure technology, micro-structure devices, etc., can solve problems such as undesired conductive connections, damage, and contamination of instruments

Pending Publication Date: 2021-06-01
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the case of this type of mask formation, the following technical problem arises when using additional functional layers such as aluminum nitride: the epitaxially deposited silicon grows at least partially on the aluminum nitride layer and thus establishes, for example, Undesired conductive connection of adjacent layers separated by aluminum layers
In principle, when using aluminum in the epitaxial production process for silicon components, there is additionally the risk that the aluminum builds up in an uncontrolled manner on the surfaces of the epitaxial installation and leads to contamination and damage to the equipment.

Method used

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  • Micro-electromechanical structure with a functional element which is arranged in a cavity of the micro-electromechanical structure
  • Micro-electromechanical structure with a functional element which is arranged in a cavity of the micro-electromechanical structure

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Embodiment Construction

[0024] exist figure 1 A microelectromechanical structure 1 , with reference to which the problem underlying the invention is described below, is depicted in a schematic cross-sectional view. The functional core of the MEMS structure 1 is the functional element 3 , in the present case a resonator 3 ′ with a sandwich structure formed from a first (lower) silicon layer 10 and a second (upper) silicon layer 9 , an aluminum nitride layer 4 is arranged between them. In this case, the silicon layers 10 , 9 act as electrodes by means of which a voltage can be applied or tapped off at the functional aluminum nitride layer 4 . A resonator 3' is arranged in the cavity 2, wherein said resonator is vibratingly connected to the remainder of the microelectromechanical structure 1 via a (not shown) suspension. The cavity is formed by a substantially vertically extending recess 12 which surrounds the functional element 3 in the transverse direction and two substantially horizontally extendin...

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Abstract

The invention relates to a micro-electromechanical structure (1) comprising a functional element (3) arranged in a cavity (2) of the micro-electromechanical structure (1). The functional element (3) has an aluminum nitride layer (4), wherein the cavity (2) is closed by a cap layer (5), and the cap layer (5) has epitaxial silicon. The invention additionally relates to a method for producing a micromechanical structure (1).

Description

technical field [0001] The invention relates to a method according to the preamble of claim 1 . Background technique [0002] Microelectromechanical systems (MEMS) having a layered structure are known from the prior art in various embodiments. Such systems serve, for example, as sensors or actuators for converting mechanical movements and electrical signals into one another. A particularly technically promising solution here is the combination of a silicon layer with one or more piezoelectric or piezoresistive functional layers, whose interaction opens up new possibilities for the configuration of the electromechanical properties of the component. [0003] Micromechanical silicon structures are generally produced by the interplay of respectively alternating material deposition and stripping. For this purpose, the layer on the substrate, for example by physical or chemical vapor deposition, produces a defined thickness into which trenches are etched in a subsequent step. T...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00
CPCB81C2203/0145B81C1/00833B81C1/00698B81B3/0018B81B2201/0271
Inventor S·马约尼M·库恩克P·魏尔
Owner ROBERT BOSCH GMBH