Three-dimensional memory and manufacturing method thereof
A manufacturing method and memory technology, which are applied in the field of semiconductors, can solve problems such as poor quality of support structures, short-circuiting of three-dimensional memories, and lowering yields of three-dimensional memories, and achieve the effects of improving conformability, optimizing structural layout, and saving plane area.
Active Publication Date: 2021-06-04
YANGTZE MEMORY TECH CO LTD
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
The quality of the support structure formed in the related art is poor, and may cause problems such as short circuits in the three-dimensional memory, reducing the yield rate of the three-dimensional memory
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
example 1
[0123] Figures 4a to 4j It is a schematic diagram of a method for manufacturing a three-dimensional memory according to an exemplary embodiment. refer to Figures 4a to 4j , the method includes the following steps:
[0124] Step 1: Refer to Figure 4a As shown, a stack structure 21 is formed on a substrate 20 , and the stack structure 21 includes insulating layers 212 and sacrificial layers 213 alternately stacked. Steps are then formed at one end of the stack structure 21 by etching, and each step includes an insulating layer 212 and a sacrificial layer 213 .
[0125] The stacked structure 21 can be divided into a core area 200a and a stepped area 200b. The core area 200a and the stepped area 200b are juxtaposed in the x direction. The core area 200a is used to set memory cells, and the stepped area 200b is an area formed by the stepped structure.
[0126] Exemplarily, the composition material of the insulating layer 212 may include silicon oxide, and the composition mat...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The embodiment of the invention discloses a three-dimensional memory and a manufacturing method thereof. The three-dimensional memory comprises a substrate, a laminated structure which is positioned on the substrate and comprises conductive layers and insulating layers which are alternately laminated along a first direction perpendicular to the substrate, and a virtual channel column which penetrates through the laminated structure along the first direction and comprises a first sub-channel column extending along a second direction and a second sub-channel column extending along a third direction; the second direction and the third direction are parallel to the plane where the substrate is located; the first sub-channel column and the second sub-channel column are crossed in a plane parallel to the substrate; the three-dimensional memory further comprises a grid line isolation structure which is arranged in the laminated structure in parallel to the first direction and extends along the second direction; in the plane parallel to the substrate, the grid line isolation structure and the virtual channel column are at least partially overlapped.
Description
technical field [0001] Embodiments of the present disclosure relate to the field of semiconductor technology, and in particular, to a three-dimensional memory and a method for manufacturing the three-dimensional memory. Background technique [0002] In order to break through the limitation of the storage capacity of the two-dimensional memory, a memory with a three-dimensional (3D) structure has been developed, and the storage capacity is increased by stacking multiple layers on a substrate with a limited area. With the increase of the memory storage capacity requirement, in order to improve the integration degree, the stacking layers of the three-dimensional memory are increasing continuously. [0003] In the manufacturing process of the three-dimensional memory, in order to prevent the stack structure from collapsing, especially the step region at the end of the stack structure, it is necessary to form a support structure through the stack structure. The quality of the su...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L27/11521H01L27/11556H01L27/11582H01L27/11568
CPCH10B41/30H10B41/27H10B43/30H10B43/27
Inventor 周颖李明
Owner YANGTZE MEMORY TECH CO LTD