A New Multi-channel High Voltage Sampling Circuit

Abstract

The invention discloses a novel multi-channel high-voltage sampling circuit, which relates to the technical field of electronic circuits. The circuit includes several parallel sampling channels, and each sampling channel is constructed based on four field effect tube groups, and each field effect tube group includes Two NMOS transistors whose source ends are connected, the drain ends of the two NMOS transistors are respectively used as the first end and the second end of the field effect transistor group, and the gate ends of the two NMOS transistors are connected and used as the third end of the field effect transistor group; Since each field effect transistor group is connected to the high-voltage signal to be sampled by the drain end of an NMOS transistor, it can avoid the breakdown of the device caused by the high voltage during use, thereby improving the reliability of the circuit. High pressure sampling in the field provides an effective solution.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a novel multi-channel high-voltage sampling circuit. Background technique [0002] High-voltage sampling circuits are widely used in the field of industrial semiconductors and automotive electronics semiconductors, especially multi-channel high-voltage sampling circuits have very important use value, but how to design high-voltage sampling circuits is one of the difficulties, especially multi-channel high-voltage sampling circuits Circuits are even more difficult. [0003] The circuit structure of the commonly used single-channel high-voltage sampling circuit on the market is as follows: figure 1 As shown, the corresponding control waveforms of each signal are as follows figure 2 As shown, the sampling principle is as follows: when clkp is high level, that is, vdd, the voltage of clkp_HV, that is, the gate terminal voltage of MOS transistor MN1 is vdd+vin, vin is t...

AI Technical Summary

Problems solved by technology

However, when the circuit is actually working, if the input signal vin2 is high voltage, the source terminal voltages of MN7, MN8, MN9 and MN10 are all high voltage, and the gate terminal voltages of these MOS tubes are all 0, because the MOS tube of the high voltage integrated circuit Most of them are bcd technology, that is, for NMOS, the drain terminal can withstand high voltage relative to the gate terminal, but the source terminal can not withstand high voltage relative to the gate terminal, so MN7, MN8, MN9 and MN10 are often at risk of being damaged by high voltage

Therefore, it can be seen that the accuracy and reliability of the existing multi-channel high-voltage sampling circuit in the actual working process are not high

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