Thin film transistor array substrate, manufacturing method thereof and digital X-ray detector device

A technology for thin film transistors and array substrates, which is applied in the fields of thin film transistor array substrates and their manufacturing and digital X-ray detector devices, can solve problems such as difficulty in storing and preserving printed films, and improve detection quantum efficiency and leakage current generation. The effect of minimizing and increasing detection power

Pending Publication Date: 2021-06-18
LG DISPLAY CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, in film printing scenarios, there are some difficulties in storing and preserving printed films

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Thin film transistor array substrate, manufacturing method thereof and digital X-ray detector device
  • Thin film transistor array substrate, manufacturing method thereof and digital X-ray detector device
  • Thin film transistor array substrate, manufacturing method thereof and digital X-ray detector device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] Some embodiments of the present disclosure are described in detail with reference to the accompanying drawings. Therefore, those skilled in the art to which the present disclosure pertains can easily realize the technical idea of ​​the present disclosure. In the description of the present disclosure, if it is determined that a detailed description of well-known technologies related to the present disclosure unnecessarily obscure the gist of the present disclosure, the detailed description may be omitted. One or more embodiments of the present disclosure are described in detail with reference to the accompanying drawings. In the drawings, the same reference numbers may be used to refer to the same or similar components.

[0032] In this document, the terms "above", "below", "on", "below" etc. are used so that where a first component is arranged "upper" or "lower" of a second component , the first component may be arranged in contact with the upper surface (or lower sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a thin film transistor array substrate, a manufacturing method thereof and a digital X-ray detector device. Provided are a thin film transistor array substrate for the digital X-ray detector device, the digital X-ray detector device, and a method of manufacturing the same, which are capable of minimizing the leakage current of a PIN diode. The leakage current blocking layer is formed to cover and contact a side surface of the PIN layer of the PIN diode to prevent contact between the PIN layer and the insulating layer, thereby minimizing the generation of leakage current of the PIN diode. Further, according to the present disclosure, the generation of leakage current of the PIN diode is minimized to increase detection power of the readout line, thereby improving the characteristics such as detection quantum efficiency (DQE) and signal-to-noise ratio (SNR), and improving the image quality of the digital X-ray detector apparatus.

Description

technical field [0001] The present disclosure relates to a thin film transistor array substrate for a digital X-ray detector device and a digital X-ray detector device capable of minimizing leakage current of a PIN (P-type semiconductor-intrinsic-type semiconductor-N-type semiconductor) diode, and fabrication thereof method. Background technique [0002] Because X-rays have short wavelengths, X-rays can easily pass through objects. The transmittance of X-rays depends on the internal density of the object. Therefore, the internal structure of the object can be observed by detecting the amount of X-rays transmitted through the object. [0003] One of the X-ray based inspection methods used in the medical field is the film printing scheme. However, in the film printing scheme, in order to check the result, an image is taken and then the film is printed. Therefore, it takes a long time to check the result. In particular, in the film printing scheme, there are some difficult...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146G01T1/20G01T1/24
CPCH01L27/14663H01L27/14603H01L27/14692G01T1/2018G01T1/24H01L27/1462H01L27/14609H01L31/115H01L27/14658H01L27/14676H01L31/105H01L31/085H01L23/60
Inventor 孔敏硕姜汶秀
Owner LG DISPLAY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products