Method for preparing diamond by multi-energy coupling plasma chemical vapor deposition method

Abstract

The invention discloses a method for preparing diamond through a multi-energy coupling plasma chemical vapor deposition method. According to the plasma chemical vapor deposition method, a hot wire, a pulsed bias power supply and a rotating magnetic field are coupled to serve as a composite energy source, and the hot wire is used for exciting carbon-containing gas to generate primary plasma; pulsed bias voltage is used for applying an electric field to the primary plasma generated by the hot wire, so that the primary plasma is stretched under the coupling action of the electric field and forms secondary plasma with a wider coverage area, the rotating magnetic field acts on a surface area of a diamond deposition substrate, particle energy in the secondary plasma is further homogenized and coupled, and the proportion of particles capable of forming a carbon structure of SP3 in the plasma is increased. According to the method, the high-quality diamond can be stably obtained, the control requirements for deposition conditions and technological parameters are relatively low, and the method is easy to control, high in regulation and control tolerance, wide in application range and particularly suitable for industrial production of the diamond.

Description

technical field [0001] The invention belongs to the field of preparation of superhard materials, and in particular relates to a method for preparing diamond by a multi-energy coupling plasma chemical vapor deposition method. Background technique [0002] Diamond has many preparation methods, such as hot wire plasma, microwave plasma, arc plasma chemical vapor deposition, etc. With the progress of industrialization, people found some problems in use, such as the hot wire method is cheap, but the quality of diamond is not high, the microwave method is of high quality, but the equipment is complicated, and it is difficult to reduce the cost by enlarging the production; the arc torch method can produce High-quality single crystal optical grade diamond, but the internal stress of diamond is relatively large, the cost is high, and the yield is less than 80%. [0003] In order to take advantage of the low cost of the hot wire, the inventor proposed in CN112030133A to utilize magne...

AI Technical Summary

Problems solved by technology

With the progress of industrialization, people found some problems in use, such as the hot wire method is cheap, but the quality of diamond is not high, the microwave method is of high quality, but the equipment is complicated, and it is difficult to reduce the cost by enlarging the production; the arc torch method can produce High-quality single crystal optical grade diamond, but the internal stress of diamond is relatively large, the cost is high, and the yield is less than 80%

[0003] In order to take advantage of the low cost of the hot wire, the inventor proposed in CN112030133A to utilize magnetic resonance, hot wire, DC coupling or utilize magnetic resonance, hot wire, high frequency coupling to prepare high-quality diamond, although it can improve the deposition of diamond However, due to the use of magnetic resonance, the req...

Images