Laser programming write-in device and method for magnetoresistive device

Abstract

The embodiment of the invention discloses a laser programming write-in device and method for a magnetoresistive device. The device comprises a substrate, a magnetoresistive sensor and a thermal control layer which are stacked in sequence, wherein a non-magnetic insulating layer used for electrical isolation is arranged between the magnetoresistive sensor and the thermal control layer, the magnetoresistive sensor is composed of magnetoresistive sensing units, the magnetic resistance sensing unit is of a multi-layer thin film stacking structure with an antiferromagnetic layer; the laser programming write-in device is used for changing film layer parameters of the thermal control layer and / or the magnetoresistive sensor in the laser programming write-in stage so as to adjust the change rate of the temperature of the magnetoresistive sensor along with the laser power, and the temperature written into the magnetoresistive sensor at the same laser power is increased or decreased; the film layer parameters comprise at least one of a film layer material and a film layer thickness. According to the method, high-precision laser writing programming of the magnetoresistive sensor is realized, manufacturing defects of the magnetoresistive sensor are improved, the performance of the magnetoresistive sensor is improved, and detection precision of the magnetoresistive sensor is further improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of magnetic sensors, and in particular to a laser programming and writing device and method for magnetoresistive devices. Background technique [0002] Magnetoresistive devices include linear sensors, angle sensors, switch sensors, gradient sensors, and downstream current sensors, financial heads, image sensors, magnetoelectric encoders, and magnetoelectric isolators. Resistive sensors, types of magnetoresistive sensors include tunneling magnetoresistance TMR sensors, giant magnetoresistance GMR sensors and anisotropic magnetoresistance AMR sensors. [0003] At present, when manufacturing a magnetoresistive sensor, it is first necessary to perform magnetic field annealing on the entire wafer (wafer), and then package it by flip die packaging. Specifically, two identical dies are selected during packaging, one die is rotated 180° relative to the other die, and then wire bonded to obtain...

AI Technical Summary

Problems solved by technology

[0004] However, there are defects in this manufacturing method. The relative phase of the two wafers needs to be realized in the later stage, and its accuracy is difficult to guarantee, which affects the performance of the magnetoresistive sensor, which in turn will reduce the detection accuracy of the magnetoresistive sensor and increase the accuracy of the magnetoresistive sensor. process complexity

Images