Semiconductor device and manufacturing method thereof
A device manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problems of low-voltage device saturation drain current reduction, low-voltage device response speed slowing, etc., to reduce size and save Die area effect
Active Publication Date: 2021-07-09
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology
[0004]
In order to improve the hot carrier injection effect of high-voltage devices, the current process is to increase the thickness of the sidewall of the semiconductor device. Although increasing the thickness of the sidewall can weaken the hot carrier injection effect of the high-voltage device, it will also saturate the low-voltage device. Drain current is reduced, resulting in slower response of low-voltage devices
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[0016] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.
[0017] In the description of this application, the terms "first", "second", "third" and so on are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "upper", "inner" and "outer" ” and other indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, which are only for the convenience of describing the application and simplifying the description, rather than ind...
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The invention provides a manufacturing method of a semiconductor device. The method comprises the following steps: providing a substrate, wherein the substrate comprises a high-voltage well region and a low-voltage well region which are arranged at an interval; forming a first grid electrode and a second grid electrode in the high-voltage well region and the low-voltage well region respectively; and forming a first side wall covering the side wall of the first grid electrode and forming a second side wall covering the side wall of the second grid electrode, wherein the thickness of the first side wall is larger than the thickness of the second side wall. The invention also provides a semiconductor device. According to the semiconductor device and the manufacturing method thereof, the side walls with different thicknesses are arranged in the high-voltage well region and the low-voltage well region respectively, and the thickness of the side wall of the high-voltage well region is larger than the thickness of the side wall of the low-voltage well region, so the hot carrier injection effect of a high-voltage device is improved, and the response speed of a low-voltage device is increased.
Description
technical field [0001] The present application relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] In the current manufacturing process of semiconductor devices, the thickness of the sidewall of the high voltage device (HVdevice) in the semiconductor device is the same as the thickness of the sidewall of the low voltage device (LV device). [0003] Due to market demand, the size of the semiconductor device is continuously reduced. When the size of the semiconductor device is reduced, the thickness of the sidewall is also proportionally reduced. For high-voltage devices, the reduction of sidewall thickness will significantly enhance the hot carrier injection effect (HCI) of high-voltage devices. [0004] In order to improve the hot carrier injection effect of high-voltage devices, the current process is to increase the thickness of the sidewall of the semiconductor device....
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IPC IPC(8): H01L21/8234H01L21/28H01L27/088H01L29/423
CPCH01L21/823468H01L27/088H01L29/42356H01L29/401
Inventor 任宇轩俞晓宇吴永坚
Owner YANGTZE MEMORY TECH CO LTD