A light emitting diode and its manufacturing method
A technology of a light-emitting diode and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problem of the reliability of light-emitting diodes to be improved, and achieve the effects of high reliability and high manufacturing cost.
Active Publication Date: 2022-02-15
YANGZHOU CHANGELIGHT
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Problems solved by technology
Therefore, the reliability of today's light-emitting diodes needs to be improved
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[0046] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0047] As described in the background art, with the gradual expansion of applications of LEDs (Light Emitting Diodes, light emitting diodes), the market has higher and higher requirements for LED performance. Therefore, the reliability of current LEDs needs to be improved.
[0048] Based on this, the embodiments of the present invention provide a light emitting diode and a manufacturing method thereof, which effectively solve the technical problems existing in...
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Abstract
The invention provides a light-emitting diode and a manufacturing method thereof, wherein the ODR mirror layer includes a metal reflective layer and a dielectric film layer located on the side of the metal reflective layer away from the back electrode, wherein the ODR reflective mirror layer Including a plurality of first through holes or a plurality of second through holes; the P-type window layer includes a main body layer and a plurality of first protrusions or a plurality of second protrusions connected to the main body layer, the first The protrusion is located in the first through hole and forms an ohmic contact with the metal reflective layer, and the second protrusion is located in the second through hole and forms an ohmic contact with the metal bonding layer. The present invention adopts the Lift-off process to realize the self-alignment of the protrusion of the P-type window layer and the ODR reflector layer when manufacturing the light-emitting diode. The technical scheme provided by the invention ensures the high reliability of the light-emitting diode, and at the same time can solve the problems of high preparation cost and complicated technological process caused by filling metal materials.
Description
technical field [0001] The invention relates to the technical field of semiconductor devices, more specifically, to a light emitting diode and a manufacturing method thereof. Background technique [0002] With the development of light-emitting diode technology, existing light-emitting diodes are widely used in electronics, optics and other fields, and have made great progress in lighting, display, and digital aspects. Moreover, with the gradual expansion of LED (Light Emitting Diode, light-emitting diode) applications, the market has higher and higher requirements for LED performance. Therefore, the reliability of current LEDs needs to be improved. Contents of the invention [0003] In view of this, the present invention provides a light emitting diode and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art and improve the reliability of the light emitting diode. [0004] In order to achieve the above object, the techn...
Claims
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IPC IPC(8): H01L33/20H01L33/38H01L33/46H01L33/00
CPCH01L33/46H01L33/20H01L33/382H01L33/387H01L33/0066H01L2933/0016H01L2933/0025
Inventor 徐洲吴奇隆马英杰蔡和勋
Owner YANGZHOU CHANGELIGHT