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A kind of preparation method of high-purity semi-insulating silicon carbide powder

A technology of silicon carbide powder and silicon carbide, which is applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of composite catalysts, organic binders that are easy to introduce pollution, impurity gases and nitrogen impurities that are difficult to exclude, and increased powder preparation. Cost and other issues, to achieve the effect of controllable particle size, simple process, and improved heat preservation effect

Active Publication Date: 2022-03-22
浙江晶越半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] CN1163895A can directly obtain α-SiC micropowder, but the composite catalyst and organic binder used are easy to introduce pollution
Due to the small size of the two raw materials used, after mixing them into the crucible, the gas in the gap between them is difficult to be completely pumped away under vacuum. Although inert gas can be added for pumping, the impurity gas, especially the nitrogen impurity, is very small. Difficult to rule out
Patents CN101302011A and CN103508454B disclose methods for secondary synthesis and tertiary synthesis of SiC powder. Although the purity of the powder can be improved, the process is complicated and the cost of powder preparation is increased.

Method used

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  • A kind of preparation method of high-purity semi-insulating silicon carbide powder
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  • A kind of preparation method of high-purity semi-insulating silicon carbide powder

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] A preparation method of high-purity semi-insulating silicon carbide powder:

[0035] (1) Mix high-purity silicon powder and high-purity carbon powder with a molar ratio of 1:1.1 through a ball mill;

[0036] (2) loading the mixed raw materials into the silicon carbide crystal growth furnace;

[0037] (3) After pumping the furnace pressure to within 0.1mbar, start the molecular pump to pump finely to 5x10 -5 mbar, the duration is 5 hours, the temperature gradient in the furnace is controlled, the temperature gradient control can be divided into two stages, the first stage is the β phase of high-purity silicon carbide powder, the temperature is kept at 1600 degrees Celsius, and the time is kept for 15 hours to ensure that the silicon powder is completely volatilized. The pressure is 100mbar, the flow rate of argon gas is 150 sccm, and the flow rate of hydrogen gas is 15 sccm;

[0038] (4) In the second stage, the semi-insulating high-purity silicon carbide powder synthe...

Embodiment 2

[0044] A preparation method of high-purity semi-insulating silicon carbide powder:

[0045] (1) Mix high-purity silicon powder and high-purity carbon powder with a molar ratio of 1:1.1 through a ball mill;

[0046] (2) loading the mixed raw materials into the silicon carbide crystal growth furnace;

[0047] (3) After pumping the furnace pressure to within 0.1mbar, start the molecular pump to pump finely to 5x10 -5 mbar, the duration is 5h, the temperature gradient in the furnace is controlled, the temperature gradient control can be divided into two stages, the first stage is the β phase of high-purity silicon carbide powder, the temperature is kept at 1400-1600 degrees Celsius, and the time is 10-15h to ensure that the silicon powder is completely For volatilization, the chamber pressure is 100mbar, the flow rate of argon gas is 150 sccm, and the flow rate of hydrogen gas is 15 sccm;

[0048] (4) In the second stage, the semi-insulating high-purity silicon carbide powder sy...

Embodiment 3

[0054] A preparation method of high-purity semi-insulating silicon carbide powder:

[0055] (1) Mix high-purity silicon powder and high-purity carbon powder with a molar ratio of 1:1.1 through a ball mill;

[0056] (2) loading the mixed raw materials into the silicon carbide crystal growth furnace;

[0057] (3) After pumping the furnace pressure to within 0.1mbar, start the molecular pump to pump finely to 5x10 -5 mbar, the duration is 5 hours, the temperature gradient in the furnace is controlled, the temperature gradient control can be divided into two stages, the first stage is the β phase of high-purity silicon carbide powder, the temperature is kept at 1400-1600 degrees Celsius, and the time is 8-15 hours to ensure that the silicon powder is completely For volatilization, the chamber pressure is 100mbar, the flow rate of argon gas is 150 sccm, and the flow rate of hydrogen gas is 15 sccm;

[0058] (4) In the second stage, the semi-insulating high-purity silicon carbide ...

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Abstract

The invention discloses a preparation method of high-purity semi-insulating silicon carbide powder. High-purity silicon powder and high-purity carbon powder are put into a thermal field for two-stage high-temperature reaction. A detachable The card-slot graphite built-in thin crucible, in order to improve the service life of the graphite crucible and facilitate disassembly. The process of the invention is simple, and the prepared silicon carbide powder has high purity and controllable particle size.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, and in particular relates to a preparation method of high-purity semi-insulating silicon carbide powder. Background technique [0002] Silicon carbide (SiC) is an important member of the third-generation wide-bandgap semiconductor materials (also known as high-temperature semiconductor materials), which has a large band gap, high thermal conductivity, high carrier saturation migration speed, and critical breakdown electric field strength. High and excellent chemical stability, the manufactured devices can be used under harsh conditions such as high temperature, high frequency, high power, high voltage, and strong radiation. At present, it has a wide range of applications in the fields of white light lighting, aerospace, nuclear reactor systems, radar communications, oil drilling, automotive electronics and equipment. [0003] The growth of high-quality SiC single crystals depend...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/984
CPCC01B32/984C01P2006/80
Inventor 高冰李俊叶宏亮
Owner 浙江晶越半导体有限公司
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