Reaction cavity, semiconductor process equipment and base temperature control method

Abstract

The invention provides a reaction cavity, semiconductor processing equipment and a base temperature control method. The reaction cavity comprises a cavity body, a base and a preheating ring, wherein the preheating ring is connected with the inner circumferential wall of the cavity body and surrounds the periphery of the base, the reaction cavity further comprises a temperature measuring assembly, the temperature measuring assembly comprises an arc-shaped detection pipe and a temperature measuring element arranged in the arc-shaped detection pipe, the arc-shaped detection pipe is arranged at the position, close to the inner circumferential edge of the preheating ring, of the bottom of the preheating ring and extends in the circumferential direction of the base; one end of the detection pipe is provided with an extension part, and the extension part penetrates through the cavity body and extends to the outside of the cavity body; the temperature measuring element is used for detecting the temperature of a plurality of temperature measuring points which are distributed at intervals in the extension direction of the arc-shaped detection pipe, and is used as an edge temperature value of the base, and wires of the temperature measuring element are led out of the cavity body through the extension part. According to the reaction cavity, the semiconductor processing equipment and the base temperature control method, the temperature of the base is detected in real time in the process state of the cavity, and the cavity does not need to be opened and the temperature measuring assembly does not need to be dismantled before the formal process is started.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a reaction chamber, semiconductor process equipment and a temperature control method for a base. Background technique [0002] The basic principle of the chemical vapor deposition epitaxial growth process is: by heating the wafer, the process gas in the reaction chamber reacts with the wafer material, and deposits a film on the surface of the wafer. In order to obtain a good epitaxial growth effect, the temperature of the wafer in the process is very important. Therefore, it is necessary to calibrate the temperature field of the reaction chamber before performing the epitaxial growth process. [0003] At present, a special calibration tray is usually used to calibrate the temperature field of the reaction chamber. Such as figure 1 As shown, the temperature calibration tray 20 is arranged on a base (not shown in the figure) in the cavity 10, and a plurality of temperat...

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Problems solved by technology

[0004] However, the above-mentioned temperature calibration tray can only be carried out when the reaction chamber is in a non-process state, but cannot monitor the temperature of the tray in real time when the reaction chamber is in a process state; On the body 10, it will hinder the rotation of the base, so it is necessary to open the cavity and remove the temperature calibration tray before the formal process, the temperature calibration efficiency is low, and it is easy to damage the temperature calibration tray during the cavity opening process, which increases the cost of the equipment

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