GaTe/ZnO-based micro generator and preparation method thereof

A micro-generator and electrode technology, which is applied in the direction of generator/motor, piezoelectric effect/electrostrictive or magnetostrictive motor, piezoelectric/electrostrictive device manufacturing/assembly, etc., can solve the problem of high cost, Low output power and other issues, to achieve the effect of low cost, high output power, and good safety

Pending Publication Date: 2021-08-17
HUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems of high cost and low output power of existing micro-generators, the present invention provides a GaTe / ZnO-based micro-generator and its preparation method

Method used

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  • GaTe/ZnO-based micro generator and preparation method thereof
  • GaTe/ZnO-based micro generator and preparation method thereof
  • GaTe/ZnO-based micro generator and preparation method thereof

Examples

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preparation example Construction

[0044] A method for preparing a GaTe / ZnO-based micro-generator, comprising the following steps in turn:

[0045] (1) Preparation of microwire components: ZnO microwires are formed on a metal substrate by chemical vapor deposition as a precursor structure; then a GaTe film is formed on the ZnO microwires by chemical vapor deposition, and the GaTe film is arranged on the ZnO microwires.

[0046] Before forming the precursor structure, the metal substrate is washed with acetone and absolute ethanol in sequence, and the surface of the metal substrate is treated with plasma. The plasma treatment in this embodiment can be cleaned with a nitrogen gun. The metal substrate in this embodiment is a silicon substrate.

[0047] a. Forming ZnO micron wires specifically includes the following steps in sequence:

[0048] Fix the metal substrate upside down on the quartz ark, place 6mg of evaporation source Zn on the quartz ark, then put the quartz ark into the tube furnace for chemical vapor...

Embodiment 2

[0066] A method for preparing a GaTe / ZnO-based micro-generator, comprising the following steps in turn:

[0067] (1) Preparation of microwire components: ZnO microwires are formed on a metal substrate by chemical vapor deposition as a precursor structure; then a GaTe film is formed on the ZnO microwires by chemical vapor deposition, and the GaTe film is arranged on the ZnO microwires.

[0068] Before forming the precursor structure, the metal substrate is washed with acetone and absolute ethanol in sequence, and the surface of the metal substrate is treated with plasma. The plasma treatment in this embodiment can be cleaned with a nitrogen gun. The metal substrate in this embodiment is a silicon substrate.

[0069] a. Forming ZnO micron wires specifically includes the following steps in sequence:

[0070] Fix the metal substrate upside down on the quartz ark, place 10mg of evaporation source Zn on the quartz ark, then put the quartz ark into a tube furnace for chemical vapor ...

Embodiment 3

[0088] A method for preparing a GaTe / ZnO-based micro-generator, comprising the following steps in turn:

[0089] (1) Preparation of microwire components: ZnO microwires are formed on a metal substrate by chemical vapor deposition as a precursor structure; then a GaTe film is formed on the ZnO microwires by chemical vapor deposition, and the GaTe film is arranged on the ZnO microwires.

[0090] Before forming the precursor structure, the metal substrate is washed with acetone and absolute ethanol in sequence, and the surface of the metal substrate is treated with plasma. The plasma treatment in this embodiment can be cleaned with a nitrogen gun. The metal substrate in this embodiment is a silicon substrate.

[0091] a. Forming ZnO micron wires specifically includes the following steps in sequence:

[0092] Fix the metal substrate upside down on the quartz ark, place 8mg of evaporation source Zn on the quartz ark, then put the quartz ark into a tube furnace for chemical vapor d...

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Abstract

The invention discloses a GaTe/ZnO-based micro generator and a preparation method thereof, and the method comprises the following steps: preparing a micron wire assembly: forming a ZnO micron wire on a metal substrate through chemical vapor deposition, and taking the ZnO micron wire as a precursor structure; forming a GaTe thin film on the ZnO microwires through chemical vapor deposition, wherein the GaTe thin film is arranged on the ZnO microwires; forming an electrode: placing the prepared micron wire assembly on the PET substrate, manufacturing electrodes at the two ends of the ZnO micron wire covered with GaTe, and connecting output lines to the electrodes; and performing packaging with a protective layer: integrally packaging the PET and the micron wire assembly by using the protective layer. The process is simple, the yield is high, the cost can be reduced, and the prepared GaTe/ZnO microgenerator has higher output power.

Description

technical field [0001] The invention relates to the field of micro-generators, in particular to a GaTe / ZnO-based micro-generator and a preparation method thereof. Background technique [0002] The "Internet of Things" concept, which associates objects and devices with large databases and networks, is emerging to enable the construction of large-scale sensor networks and systems. For these systems, most sensors require an additional battery for power, making it difficult to be self-powered in harsh environments. In wireless MEMS and NEMS sensors, electrical energy recovery from ambient mechanical energy resources is the most feasible approach. If the sensor generates electricity when subjected to mechanical energy, it can operate without an external power source, which simplifies the sensor system and greatly reduces energy consumption. Therefore, developing self-powered active sensors can facilitate the development of wireless active sensor networks and IoT systems. [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/113H01L41/18H01L41/053H01L41/22H01L41/23H01L41/316
CPCH02N2/18H10N30/883H10N30/30H10N30/85H10N30/01H10N30/02H10N30/076
Inventor 李求果龚伟平梅海娟赵振廷
Owner HUIZHOU UNIV
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