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Method for manufacturing element

A manufacturing method and component technology, applied in the field of components, can solve the problems of removal, damage, and deterioration of the photoelectric conversion layer of solar cells, and achieve the effect of suppressing deterioration.

Pending Publication Date: 2021-08-17
株式会社安能科多科技
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, if such etching is performed, the masked part will also be removed, which will cause a short circuit
[0005] In particular, when the power generation layer is separated by dry etching using plasma formed of carbon tetrafluoride gas or oxygen, there is a problem of wrapping under the mask and causing damage to the masked part.
[0006] Moreover, there is a problem of deterioration of the photoelectric conversion layer when manufacturing solar cells

Method used

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Embodiment

[0101] Examples of the invention described in this specification will be specifically described below using examples. The invention described in this specification is not limited to the following examples, and includes those in which known elements are appropriately added.

[0102] Figure 9 It is a conceptual diagram for explaining the solar cell in Example 1.

[0103] On the glass substrate 3, there is ITO (indium tin oxide) patterned into a predetermined shape electrode 5 in advance, and an electron transport layer 7, a perovskite layer 9, and a hole transport layer 11 are coated in sequence. The electron transport layer 7 can be spin-coated with colloidal SnO 2 aqueous solution and allowed to dry to form. After coating a predetermined material by the spin coating, an antisolvent is further coated, whereby a high-quality perovskite layer 9 can be obtained. The hole transport layer 11 can be obtained by spin-coating a solution containing Spiro-MeOTAD and drying it.

[0...

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Abstract

The present invention addresses the problem of providing a method for manufacturing an element by suppressing deterioration of a photoelectric conversion layer without deriving a short circuit due to etching. In the method for manufacturing element, in which an element material has an electrode formed on a substrate, the electrode including a first electrode and a second electrode separated from each other, and a photoelectric conversion layer formed in a region including the first electrode and the second electrode, the method for manufacturing the element includes the following steps for the element material: a step for forming a first back surface electrode and a second back surface electrode on the photoelectric conversion layer at positions corresponding to the first electrode and the second electrode, respectively, wherein the first back surface electrode and the second back surface electrode are not connected; a step for performing etching using the first back surface electrode and the second back surface electrode as masks; and a connection electrode forming step of forming a connection electrode for connecting the first back surface electrode and the second back surface electrode.

Description

technical field [0001] The present invention relates to a method of manufacturing elements such as solar cells and organic EL. Background technique [0002] Japanese Patent Application Laid-Open No. 2018-163938 describes a solar cell. [0003] For example, in order to obtain a solar cell module having a high voltage, it is desirable to connect cells in series on the same substrate to form a solar cell module having an integrated structure. [0004] Then, when separating the power generation layer in order to obtain a module with an integrated structure, it is assumed that etching is performed using a mask to remove a part of the perovskite layer and the hole transport layer. However, if such etching is performed, the masked portion is also removed, which causes a short circuit. [0005] In particular, when the power generation layer is separated by dry etching using carbon tetrafluoride gas or oxygen plasma, there is a problem of wrapping under the mask and damage to the m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42H01L51/44H01L51/46
CPCH10K71/60H10K85/30H10K30/81H10K30/00Y02E10/549H01L31/0463H01L31/0465Y02P70/50H10K71/231H10K30/211H10K85/50H01G9/20
Inventor 高滨豪薮本利彦
Owner 株式会社安能科多科技