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A kind of chemical mechanical polishing method of wafer surface

A grinding method and chemical-mechanical technology, applied in the manufacture of electrical components, circuits, semiconductor/solid-state devices, etc., can solve the problems of inappropriate chemical mechanical polishing, limited effect, reduce the depth of butterfly defects, etc., to improve grinding efficiency, The effect of increasing machine capacity and improving the degree of flatness

Active Publication Date: 2022-07-29
SIWAVE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the polishing composition provided by the invention is not suitable for chemical mechanical polishing of metal copper, and has a limited effect on reducing the depth of butterfly defects, and there is still a large room for optimization

Method used

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  • A kind of chemical mechanical polishing method of wafer surface

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Comparison scheme
Effect test

Embodiment 1

[0055] This embodiment provides a chemical mechanical polishing method for a wafer surface. For a schematic diagram of the wafer surface, see figure 1 , the chemical mechanical polishing method comprises the following steps:

[0056] (1) The first grinding with a pressure of 2.5 psi is performed on the surface of the wafer, and along with the injection of polishing liquid 1 with a flow rate of 290 mL / min to the surface of the wafer, the copper body on the groove of the wafer is removed to the surface of the obtained wafer. The thickness is 190nm;

[0057] (2) The surface of the wafer obtained in step (1) is subjected to a second grinding with a pressure of 1.8 psi, and along with injecting polishing liquid 1 with a flow rate of 290 mL / min to the surface of the wafer, the copper residues on the grooves of the wafer are removed. ;

[0058] (3) The pressure applied to the surface of the wafer obtained in step (2) is 0.9 psi, and the polishing rate is The over-polishing treatm...

Embodiment 2

[0063] This embodiment provides a chemical mechanical polishing method for a wafer surface. For a schematic diagram of the wafer surface, see figure 1 , the chemical mechanical polishing method comprises the following steps:

[0064] (1) The first grinding with a pressure of 2 psi is performed on the surface of the wafer, and along with the injection of polishing liquid 1 with a flow rate of 280 mL / min to the surface of the wafer, the copper body on the groove of the wafer is removed to the thickness of the obtained wafer is 200nm;

[0065] (2) The second grinding with a pressure of 1.5 psi is performed on the surface of the wafer obtained in step (1), and the polishing solution 1 with a flow rate of 280 mL / min is injected onto the surface of the wafer to remove the copper residue on the groove of the wafer. ;

[0066] (3) The pressure applied to the surface of the wafer obtained in step (2) is 0.8 psi, and the polishing rate is The over-polishing treatment, accompanied by...

Embodiment 3

[0071] This embodiment provides a chemical mechanical polishing method for a wafer surface. For a schematic diagram of the wafer surface, see figure 1 , the chemical mechanical polishing method comprises the following steps:

[0072] (1) The first grinding with a pressure of 3 psi is performed on the surface of the wafer, and along with the injection of polishing liquid 1 with a flow rate of 300 mL / min to the surface of the wafer, the copper body on the groove of the wafer is removed to the thickness of the obtained wafer. is 180nm;

[0073] (2) the second grinding that the applied pressure is 2psi is carried out to the wafer surface obtained in step (1), and along with the injection flow rate of 300mL / min of polishing liquid 1 to the wafer surface, the copper residue on the wafer groove is removed;

[0074] (3) The pressure applied to the surface of the wafer obtained in step (2) is 1 psi, and the polishing rate is The over-polishing treatment, accompanied by the injection...

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Abstract

The present invention provides a chemical mechanical polishing method for the surface of a wafer. The chemical mechanical polishing method includes the following steps: (1) first polishing the surface of the wafer to remove the copper body on the groove of the wafer; The second grinding is performed on the surface of the wafer obtained in step (1) to remove copper residues on the grooves of the wafer; (3) the surface of the wafer obtained in step (2) is subjected to over-polishing to reduce the depth of butterfly defects; (4) ) perform a third grinding on the surface of the wafer obtained in step (3) to thin the oxide layer on the wafer trench to a predetermined thickness. The method provided by the present invention effectively reduces the butterfly defect depth of metal copper, further improves the planarization degree of the wafer surface, simultaneously improves the grinding efficiency, and increases the productivity of the machine.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a chemical mechanical grinding method, in particular to a chemical mechanical grinding method of a wafer surface. Background technique [0002] In the backside illuminated image sensor (BSI) manufacturing process, chemical mechanical polishing (CMP) is commonly used in the art to planarize the wafer surface before the oxide layer is bonded. The flatness of the wafer surface directly affects the number and size of bubbles between the subsequent bonded wafers, which in turn affects the work efficiency of the wafers. The current single-chip chemical mechanical polishing process for the oxide layer is weak in repairing butterfly defects in the wafer, which in turn causes the final wafer surface flatness to be affected by the superposition of butterfly defects. [0003] CN 102371534A discloses a chemical mechanical polishing method for the surface of a wafer, the me...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/321H01L21/306H01L21/3105H01L21/67
CPCH01L21/3212H01L21/30625H01L21/3105H01L21/67253
Inventor 黄清波朱文渊周雪梅潘代强
Owner SIWAVE INC
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