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Chemical mechanical polishing method for wafer surface

A grinding method and chemical-mechanical technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of unsuitable chemical-mechanical polishing, reduce the depth of butterfly defects, and have limited effects, so as to improve grinding efficiency, The effect of increasing the production capacity of the machine and improving the degree of flattening

Active Publication Date: 2021-08-31
SIWAVE INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the polishing composition provided by the invention is not suitable for chemical mechanical polishing of metal copper, and has a limited effect on reducing the depth of butterfly defects, and there is still a large room for optimization

Method used

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  • Chemical mechanical polishing method for wafer surface

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] This embodiment provides a chemical mechanical polishing method for the surface of a wafer. The schematic diagram of the wafer surface is shown in figure 1 , the chemical mechanical polishing method comprises the following steps:

[0056] (1) The wafer surface is subjected to the first grinding with a pressure of 2.5psi, and the polishing liquid 1 is injected into the wafer surface at a flow rate of 290mL / min to remove the copper body on the wafer groove to the wafer surface The thickness is 190nm;

[0057] (2) The surface of the wafer obtained in step (1) is subjected to the second grinding with a pressure of 1.8psi, and the polishing liquid 1 is injected into the wafer surface at a flow rate of 290mL / min to remove the copper residue on the wafer groove ;

[0058] (3) Applying a pressure to the surface of the wafer obtained in step (2) is 0.9psi, and the polishing rate is Over-polishing treatment, accompanied by injection of polishing fluid 1 at a flow rate of 400m...

Embodiment 2

[0063] This embodiment provides a chemical mechanical polishing method for the surface of a wafer. The schematic diagram of the wafer surface is shown in figure 1 , the chemical mechanical polishing method comprises the following steps:

[0064] (1) The wafer surface is subjected to the first grinding with a pressure of 2psi, accompanied by the injection of polishing fluid 1 at a flow rate of 280mL / min to the wafer surface, to remove the copper body on the wafer groove to the thickness of the obtained wafer 200nm;

[0065] (2) The surface of the wafer obtained in step (1) is subjected to the second grinding with a pressure of 1.5psi, and the polishing liquid 1 is injected into the wafer surface at a flow rate of 280mL / min to remove the copper residue on the wafer groove ;

[0066] (3) Applying a pressure to the surface of the wafer obtained in step (2) is 0.8psi, and the polishing rate is The over-polishing treatment, accompanied by the injection of polishing fluid 1 with ...

Embodiment 3

[0071] This embodiment provides a chemical mechanical polishing method for the surface of a wafer. The schematic diagram of the wafer surface is shown in figure 1 , the chemical mechanical polishing method comprises the following steps:

[0072] (1) The wafer surface is subjected to the first grinding with a pressure of 3psi, accompanied by the injection of polishing fluid 1 at a flow rate of 300mL / min to the wafer surface, to remove the copper body on the wafer groove to the thickness of the obtained wafer 180nm;

[0073] (2) The surface of the wafer obtained in step (1) is subjected to the second grinding with a pressure of 2psi, and the polishing liquid 1 is injected into the wafer surface at a flow rate of 300mL / min to remove the copper residue on the wafer groove;

[0074] (3) applying pressure to the surface of the wafer obtained in step (2) is 1psi, and the polishing rate is The over-polishing treatment, accompanied by the injection of polishing fluid 1 with a flow r...

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Abstract

The invention provides a chemical mechanical polishing method for a wafer surface, and the method comprises the following steps: (1) carrying out first polishing on the wafer surface to remove a copper main body on a wafer groove; (2) carrying out second grinding on the surface of the wafer obtained in the step (1), and removing copper residues on the groove of the wafer; (3) carrying out over-polishing treatment on the surface of the wafer obtained in the step (2) to reduce the depth of the butterfly defect; (4) carrying out third grinding on the surface of the wafer obtained in the step (3), and thinning the oxide layer on the groove of the wafer to a set thickness. According to the method provided by the invention, the butterfly defect depth of the metal copper is effectively reduced, the planarization degree of the wafer surface is further improved, the grinding efficiency is improved, and the productivity of a machine table is increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and relates to a chemical mechanical polishing method, in particular to a chemical mechanical polishing method for a wafer surface. Background technique [0002] In the manufacturing process of the back-illuminated image sensor (BSI), chemical mechanical polishing (CMP) is commonly used in the field to planarize the surface of the wafer before bonding the oxide layer. The degree of planarization of the wafer surface directly affects the number and size of air bubbles between subsequent bonded wafers, which in turn affects the working efficiency of the wafer. The current monolithic oxide layer chemical mechanical polishing process has a weak ability to repair butterfly defects in the wafer, which leads to the final wafer surface planarization degree being affected by the superposition of butterfly defects. [0003] CN 102371534A discloses a chemical mechanical polishing method...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/321H01L21/306H01L21/3105H01L21/67
CPCH01L21/3212H01L21/30625H01L21/3105H01L21/67253
Inventor 黄清波朱文渊周雪梅潘代强
Owner SIWAVE INC
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