Power semiconductor device

Abstract

The present invention addresses the problem of achieving low inductance of wiring in a power semiconductor device provided with smoothing capacitors and size reduction of the power semiconductor device. A power semiconductor device according to the present invention is provided with: a power semiconductor circuit section; a plurality of smoothing capacitors; a positive electrode conductor section and a negative electrode conductor section; and a sealing material. The plurality of smoothing capacitors constitute a capacitor circuit section sandwiched between the positive electrode conductor section and the negative electrode conductor section. The power semiconductor circuit section has: a first exposed surface that is exposed from the sealing material; and a second exposed surface that is exposed from the sealing material and that is provided on the opposite side from said first exposed surface. When a plane overlapping the first exposed surface is defined as a first plane and a plane overlapping the second exposed surface is defined as a second plane, the capacitor circuit section is formed so as to be placed in a space between the first plane and the second plane. The positive electrode conductor section or the negative electrode conductor section forms a recessed section for accommodating some of the plurality of smoothing capacitors.

Description

technical field [0001] The present invention relates to a power semiconductor device, and more particularly to a power semiconductor device used in a power conversion device for converting DC power into AC power. Background technique [0002] Against the background of increasing environmental restrictions, the market for inverters for EVs is growing rapidly worldwide. On the other hand, inverters driven by high carrier frequency such as SiC are attracting attention, and a low inductance structure for realizing high carrier frequency drive is required. [0003] In the power semiconductor device described in Patent Document 1, since the power semiconductor element part and the capacitor are arranged on the same surface of the negative electrode conductor part and the positive electrode conductor part, it is necessary to adjust the thickness of the capacitor to the thickness of the power semiconductor element part. The degree of freedom is low, and the size of the capacitors a...

AI Technical Summary

Problems solved by technology

[0003] In the power semiconductor device described in Patent Document 1, since the power semiconductor element part and the capacitor are arranged on the same surface of the negative electrode conductor part and the positive electrode conductor part, it is necessary to adjust the thickness of the capacitor to the thickness of the power semiconductor element part. Low degrees of freedom, limited capacitor size and number of capacitors available per power semiconductor device

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