Monolithic integrated edge-emitting laser and manufacturing method

An edge-emitting laser and monolithic integration technology, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of low system stability and bulky laser radar system, and achieve reduced power density, improved reliability, and high output The effect of power

Active Publication Date: 2022-05-27
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the volume of the entire lidar system is relatively large, and the stability of the system is relatively low

Method used

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  • Monolithic integrated edge-emitting laser and manufacturing method
  • Monolithic integrated edge-emitting laser and manufacturing method
  • Monolithic integrated edge-emitting laser and manufacturing method

Examples

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Effect test

Embodiment 1

[0058] In this embodiment, the working wavelength of the monolithically integrated edge-emitting laser is 940 nm and is based on gallium arsenide (GaAs) material.

[0059] The structure of a monolithically integrated edge-emitting laser is as follows figure 1 As shown: the first electrode 1 is a negative electrode, and the material is AuGeNiAu; the second electrode 8 is a positive electrode, and the material is TiPtAu; the substrate 2 is made of n-type GaAs; the low-refractive index material layer 3 is n-type Al 0.9 Ga 0.1 As layer, the thickness is 334nm, the first high refractive index material layer 4 is n-type Al 0.12 Ga 0.88 The As layer has a thickness of 157 nm. The low-refractive-index material layer 3 and the first high-refractive-index material layer 4 grow 5.5 groups periodically and alternately in the material epitaxy to form a multilayer structure 5 similar to the Bragg mirror structure. The multilayer structure 5 is formed on the substrate, and many The layer...

Embodiment 2

[0064] In this embodiment, the working wavelength of the monolithically integrated edge-emitting laser is 940 nm and is based on gallium arsenide (GaAs) material.

[0065] The structure of a monolithically integrated edge-emitting laser is as follows Figure 5 As shown: the first electrode 1 is a negative electrode, and the material is AuGeNiAu; the second electrode 8 is a positive electrode, and the material is TiAu; the substrate 2 is made of n-type GaAs; the low-refractive index material layer 3 is n-type Al 0.9 Ga 0.1 As layer, the thickness is 334nm, the first high refractive index material layer 4 is n-type Al 0.12 Ga 0.88 The As layer has a thickness of 157 nm. The low-refractive-index material layer 3 and the first high-refractive-index material layer 4 grow 5.5 groups periodically and alternately in the material epitaxy to form a multilayer structure 5 similar to the Bragg mirror structure. The multilayer structure 5 is formed on the substrate, and many The layer ...

Embodiment 3

[0067] In this embodiment, the working wavelength of the monolithically integrated edge-emitting laser is 940 nm and is based on gallium arsenide (GaAs) material. The structure is similar to that of Embodiment 2, except that a one-dimensional periodic surface micro-nano structure, ie a one-dimensional surface grating, is introduced into the ridge waveguide 9, which is fabricated by electron beam exposure and dry etching to achieve longitudinal mode selection. Image 6 A schematic top view of a one-dimensional surface grating is shown.

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Abstract

A monolithic integrated edge-emitting laser and its preparation method, the monolithic integrated edge-emitting laser comprises: a substrate; a multilayer structure, which is a periodic or quasi-periodic structure grown on the substrate by multiple pairs of semiconductor material layers, each The semiconductor material layer includes a low-refractive-index material layer and a first high-refractive-index material layer in sequence along a direction perpendicular to the substrate, and the thickness of each semiconductor material layer is not less than λ / 5n, where λ is The operating wavelength of the monolithic integrated edge-emitting laser, n is the refractive index of each layer of the semiconductor material layer; the second high refractive index material layer is formed on the last grown low refractive index material layer in the multilayer structure , the refractive index of the second high refractive index material layer is higher than that of the first high refractive index material layer and the low refractive index material layer; the active layer is located in the second high refractive index material layer, and the active layer The thickness is smaller than the thickness of the second high refractive index material layer.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a monolithic integrated edge-emitting laser and a preparation method. Background technique [0002] Semiconductor lasers are widely used in laser radar, optical communication, optical interconnection, laser radar, laser lighting, intelligent manufacturing, consumer electronics and many other fields, and are an indispensable light source in the modern information society. In lidar, the field of view is an important parameter, and the field of view of lidar is mainly determined by the beam performance of the semiconductor laser. In the long-distance detection application of lidar, the required horizontal field of view is relatively large, such as 100 degrees, and the required vertical field of view is small, such as 15 degrees. [0003] Semiconductor lasers include surface-emitting lasers and edge-emitting lasers. Compared with surface-emitting lasers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/065H01S5/20H01S5/34
CPCH01S5/34H01S5/0655H01S5/2018
Inventor 刘安金张靖
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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