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Semiconductor structure and method of forming the same

A semiconductor and intermediate structure technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as device performance needs to be improved, and achieve the effect of avoiding poor appearance and improving performance

Active Publication Date: 2022-08-09
SEMICON MFG INT TIANJIN +1
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  • Claims
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Problems solved by technology

[0004] However, the performance of devices formed by existing processes still needs to be improved

Method used

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  • Semiconductor structure and method of forming the same
  • Semiconductor structure and method of forming the same
  • Semiconductor structure and method of forming the same

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Embodiment Construction

[0017] It can be known from the background art that the performance of the device formed by the existing process still needs to be improved. Now combined with a method for forming a semiconductor structure, the reasons why the device performance needs to be improved are analyzed.

[0018] Specifically, after the small-scale structures are formed, these small-scale structures are usually further processed. However, due to the small size of these small-scale structures, it is difficult to control the processing of these small-scale structures, which can easily cause these small-scale structures. The morphology of the dimensional structure is poor, which in turn affects the performance of the device.

[0019] For example, refer to figure 1 , in the process of forming a semiconductor device, it is necessary to remove the fins outside the device area (such as etching), whether it is directly processing the fins in the pattern area to be processed, or the fins used to form the fins...

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Abstract

A semiconductor structure and a method for forming the same, the method comprising: providing a substrate on which a structure to be processed is formed, the substrate comprising a pattern area to be processed, and the pattern area to be processed includes part of the structure to be processed, The length direction of the to-be-processed graphic area is the extension direction of the to-be-processed structure; the to-be-processed structures at both ends of the to-be-processed graphic area are removed, and the remaining to-be-processed structures in the to-be-processed graphic area are used as intermediate structures; The intermediate structure takes the remaining structure to be processed on the substrate as the target structure, which realizes precise control of the processing process of the structure to be processed and improves the performance of the device.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the continuous development of ultra-large integrated circuits, the critical dimension (CD) of semiconductor devices continues to decrease, and its manufacturing process also faces many limitations and challenges. In the case of smaller and smaller critical dimensions, how to improve small-scale graphics The accuracy and stability of the system have become a research hotspot in the industry. [0003] The self-aligned double patterning (SADP) method and the self-aligned quadruple patterning (SAQP) method are the favored patterning methods in recent years. The density of the pattern formed on the substrate by the self-aligned double patterning method is twice that of the pattern formed on the substrate by the photolithography process, that is, 1 / 2 minimum pitch (1 / ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/308H01L29/10
CPCH01L21/3086H01L21/3088H01L29/1033
Inventor 纪世良刘盼盼张海洋
Owner SEMICON MFG INT TIANJIN
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