Reference current determination method and device for nonvolatile memory cell and storage medium

Abstract

The invention discloses a reference current determination method and device for a nonvolatile memory cell and a storage medium, and the reference current determination method comprises the steps: receiving a test reference current instruction sent by a test machine, with the test reference current instruction comprising a minimum gear number; generating a plurality of different reference current values; traversing the reference current values to execute read operation on memory chips, performing read operation verification on the memory chips, and recording the gear number of the reference current values capable of passing verification, the maximum reference current value and the minimum reference current value; and when the gear number is greater than or equal to the minimum current gear number, determining an optimal reference current value applied to the memory chips according to the maximum reference current value and the minimum reference current value. By applying the method provided by the invention, the reference current value can be set for the memory chips with different production processes according to the internal actual conditions of the memory chips, so that the performance difference caused by factors such as fluctuation of the production processes is made up, and reliability of the chips is improved.

Description

technical field [0001] The present invention relates to the technical field of memory chips, in particular to a method, device and storage medium for determining a reference current of a nonvolatile memory unit. Background technique [0002] When the storage unit of the non-volatile memory chip is performing a read operation, the reference current is usually compared with the read current of the storage unit to represent the data stored in the storage unit (for example, when the read current of the storage unit is greater than the reference current, it means The stored data is 1, and when the read current of the memory cell is lower than the reference current, it means that the stored data is 0), therefore, the setting of the reference current is very important for the correct reading of the data. Under the existing technology, the reference current is usually set in the CP test (Circuit Probing Test) stage of mass production of memory chips. First, a circuit is designed in ...

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Problems solved by technology

[0003] However, due to different production processes, the actual optimal reference current values ​​of different memory chips are not the same. Using the above method to set the reference current value of some memory chips will not be optimal, which will affect the accuracy of the read operation.

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