Reference current determination method and device for nonvolatile memory cell and storage medium

A non-volatile storage and reference current technology, applied in information storage, static memory, read-only memory, etc., can solve problems affecting the accuracy of read operations

Pending Publication Date: 2021-09-17
珠海博雅科技股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to different production processes, the actual optimal reference current values ​​of different memory chips are not the same. Usin

Method used

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  • Reference current determination method and device for nonvolatile memory cell and storage medium
  • Reference current determination method and device for nonvolatile memory cell and storage medium
  • Reference current determination method and device for nonvolatile memory cell and storage medium

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Embodiment Construction

[0041] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0042] Embodiments of the present invention provide a method, device, and storage medium for determining a reference current of a non-volatile storage unit. According to the maximum reference current value and the minimum reference current value that pass the test in the storage unit, the maximum current value applicable to the current storage unit is calculated. The best reference current value can make up for the performance difference caused by factors such as production process fluctuations and improve the reliability of the chip.

[0043] The embodiments of the present invention will be furthe...

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Abstract

The invention discloses a reference current determination method and device for a nonvolatile memory cell and a storage medium, and the reference current determination method comprises the steps: receiving a test reference current instruction sent by a test machine, with the test reference current instruction comprising a minimum gear number; generating a plurality of different reference current values; traversing the reference current values to execute read operation on memory chips, performing read operation verification on the memory chips, and recording the gear number of the reference current values capable of passing verification, the maximum reference current value and the minimum reference current value; and when the gear number is greater than or equal to the minimum current gear number, determining an optimal reference current value applied to the memory chips according to the maximum reference current value and the minimum reference current value. By applying the method provided by the invention, the reference current value can be set for the memory chips with different production processes according to the internal actual conditions of the memory chips, so that the performance difference caused by factors such as fluctuation of the production processes is made up, and reliability of the chips is improved.

Description

technical field [0001] The present invention relates to the technical field of memory chips, in particular to a method, device and storage medium for determining a reference current of a nonvolatile memory unit. Background technique [0002] When the storage unit of the non-volatile memory chip is performing a read operation, the reference current is usually compared with the read current of the storage unit to represent the data stored in the storage unit (for example, when the read current of the storage unit is greater than the reference current, it means The stored data is 1, and when the read current of the memory cell is lower than the reference current, it means that the stored data is 0), therefore, the setting of the reference current is very important for the correct reading of the data. Under the existing technology, the reference current is usually set in the CP test (Circuit Probing Test) stage of mass production of memory chips. First, a circuit is designed in ...

Claims

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Application Information

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IPC IPC(8): G11C16/30G11C16/26G11C5/14G11C29/50
CPCG11C16/30G11C16/26G11C5/147G11C29/50G11C2029/5006
Inventor 安友伟马亮杨小龙
Owner 珠海博雅科技股份有限公司
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