A double-supported silicon boat with adjustable relative height and heat treatment device

A relatively high, double-supported technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems of affecting the heat treatment effect of silicon wafers, uneven heating, and inaccessible gas in shielded areas.

Active Publication Date: 2021-11-09
ハンチョウダニュアンジャクシンセミコンダクターテクノロジーカンパニーリミテッド
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, for the current traditional silicon boat, there are also some small disadvantages: for the structure of the silicon boat, it usually includes end plates located at both ends, and support bars connecting the two end plates. a support block, so that the silicon wafers are respectively placed on the support blocks, in the heat treatment device, a small part of the surface of the silicon wafer will be in contact with the support block to form a shielding area, which makes the shielding area unable to touch the gas all the time, while being heated at the same time It will also be uneven, thus affecting the heat treatment effect of the entire silicon wafer

Method used

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  • A double-supported silicon boat with adjustable relative height and heat treatment device
  • A double-supported silicon boat with adjustable relative height and heat treatment device
  • A double-supported silicon boat with adjustable relative height and heat treatment device

Examples

Experimental program
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Effect test

Embodiment 1

[0034] Please refer to figure 1 and figure 2 , this embodiment provides a dual-support silicon boat with adjustable relative height, including a top plate 1 , a bottom plate 2 and a first support assembly fixedly installed between the top plate 1 and the bottom plate 2 . The first support assembly includes at least two first support bars 3 , and first support blocks 31 for placing silicon wafers 8 are arranged at intervals on the first support bars 3 .

[0035] The double-supported silicon boat also includes a second support component, which is slidingly fitted with the top plate 1 and / or bottom plate 2, and in this embodiment, includes at least two second support bars 4, the second support component Second support blocks 41 for placing silicon wafers 8 are arranged at intervals on the support bars 4 . In this embodiment, the number of the first support bar 3 and the second support bar 4 are equal to three. In order to enhance the sliding stability of the second support as...

Embodiment 2

[0047] The above embodiment realizes one vertical displacement of the second support bar 4, which can solve the problem to a certain extent. However, the heat treatment requires a long time. Based on this, in this embodiment, the intermittent reciprocating movement of the second support bar 4 is used to further improve the heat treatment effect of the silicon wafer.

[0048] Such as Figure 2 to Figure 5 As shown, on the basis of the first embodiment, the bottom cover 6 of this embodiment is provided with a first through hole 61 and a second through hole 62 that are opened / closed with the deformation of the deformation component 51 . The first through hole 61 and the second through hole 62 are respectively used to communicate with the cold source space and the heat source space in the heat treatment device.

[0049] Specifically, a stopper 73 fixedly connected with the pinch plate 7 is provided under the pinch plate 7 . The first through hole 61 is disposed at the bottom of ...

Embodiment 3

[0054] Please refer to Figure 9 This embodiment provides a heat treatment device, including a furnace body L1, a heating module L2 is disposed in the furnace body L1, and the double-supported silicon boat 10 described in the second embodiment is disposed in the furnace body L1.

[0055] A cold source space L3 and a heat source space L4 are respectively provided at the bottom of the furnace body L1 corresponding to the first through hole 61 and the second through hole 62; An auxiliary heating module L41 is provided. The cold source space L3 and the heat source space L4 are set independently.

[0056] It is worth mentioning that the heating module L2 and the auxiliary heating module L41 are independently controlled electric heating wires, and the cooling module L31 is a coil tube containing cooling liquid. The specific working principle of the double-supported silicon boat 10 is as in the second embodiment, and will not be repeated here.

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Abstract

The invention provides a dual-support silicon boat with adjustable relative heights, and relates to the technical field of semiconductor devices. It includes a top plate, a bottom plate, and a first support assembly fixedly installed between the top plate and the bottom plate; the first support assembly includes at least two first support bars, and the first support bars are provided with first support blocks for placing silicon chips at intervals; Including a second support assembly, the second support assembly is slidingly matched with the top plate and / or the bottom plate; the jacking mechanism includes a deformation assembly that is deformed by heat, and the deformation assembly produces a vertical upward deformation after being heated, and the second support block is relative to the first The support block moves vertically upwards until the second support block lifts the silicon wafer, so that the silicon wafer is separated from the first support block; the invention also provides a heat treatment device. The present invention effectively improves the heat treatment effect of the shielding area through the double support design.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a dual-support silicon boat and a heat treatment device with adjustable relative heights. Background technique [0002] Silicon wafers are an important material for making integrated circuits. Various semiconductor devices can be made by performing photolithography and ion implantation on silicon wafers, especially silicon wafers are required for chips. [0003] When silicon wafers are used to manufacture chips, there are many processes, one of which is the heat treatment process. The heat treatment process is an important process performed for the purpose of forming a defect-free layer on the surface of the silicon wafer, gettering, crystallization, formation of an oxide film, and diffusion of impurities. [0004] In order to orderly place the silicon wafers into the heat treatment device, a carrier made of silicon with stable material properties is usually used, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/673H01L21/67H01L21/324
CPCH01L21/67309H01L21/67098H01L21/67109H01L21/324
Inventor 韩颖超马潇周波李长苏
Owner ハンチョウダニュアンジャクシンセミコンダクターテクノロジーカンパニーリミテッド
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