Word line structure and semiconductor memory

Abstract

The invention relates to a word line structure and a semiconductor memory. The word line structure comprises a first word line array and a second word line array; the first word line array comprises a plurality of first word lines extending along the X direction, and the plurality of first word lines have the same length and are aligned in the Y direction; the second word line array comprises a plurality of second word lines extending in the X direction, and the plurality of second word lines have the same length and are aligned and arranged in the Y direction; wherein the first word line array and the second word line array are not aligned in the Y direction, and the Y direction is perpendicular to the X direction. By making the first word line array and the second word line array not aligned in the Y direction, a larger setting space is provided for the word line contact structure in a horizontal plane, so that the cross sectional area of the word line contact structure can be enlarged, the contact resistance between the word line contact structure and the corresponding word line is reduced, and the switching-on and switching-off speed of the switch in the storage unit is improved.

Description

technical field [0001] The invention relates to the semiconductor field, in particular to a word line structure and a semiconductor memory. Background technique [0002] The continuous development of science and technology has made people have higher and higher requirements for semiconductor technology, and the area of ​​semiconductor devices has been continuously reduced. Therefore, higher requirements have been put forward for the precision and accuracy of semiconductor manufacturing processes. Semiconductor memory is a kind of memory accessed by semiconductor circuits, among which Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM) is widely used in various fields due to its fast storage speed and high integration. [0003] DRAM includes multiple repeated memory cells. As the size of DRAM continues to shrink and the degree of integration continues to increase, the feature size and cell area of ​​DRAM will decrease, so the area of ​​the word line contact stru...

AI Technical Summary

Problems solved by technology

[0004] Based on this, it is necessary to provide a word line structure and a semiconductor memory device for the problem of insufficient opening and closing speed of the switch in the memory cell due to excessive contact resistance.

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